Samsung Electronics Co., Ltd.

Jong Choi Kim

Chang Wook Jeong

Yo Han Kim

Seung Hyun Song

Ui Hui Kwon

Kyu Baik Chang

Yoon Suk Kim

A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

Growing community of inventors

Seoul, South Korea

Jong Choi Kim