Samsung Electronics Co., Ltd.

Jong-cheol Shin

Yu-jin Ahn

Min-ji Jung

Kwang-joon Yoon

Keon Kuk

Yong-soo Oh

Chang-seung Lee

Sang-hyun Lee

Jae-sik Min

Sang-wook Lee

Chan Jae Park

Hyeon-Cheol Kim

Seog Soon Baek

Heung-kwun Oh

Sung-joon Park

Chang-rok Moon

Sang-Jun Choi

Seok-Ha Lee

Duck-Hyung Lee

Duck-hyung Lee

Eun-Kyung Park

Kang-bok Lee

Jong-Wook Hong

An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.

Image sensor including planar boundary between optical black and active pixel sensor areas with a wiring layer comprising a stepped portion and a via contact portion that penetrates through the pad area of a substrate

Image sensor comprising a light shielding pattern with plural portions spaced apart on pixels of a sensor array area

Image sensor including planar boundary between optical black and active pixel sensor areas

Image sensors are provided. The image sensors may include first and second stacked impurity regions having different conductivity types. The image sensors may also include a floating diffusion region in the first impurity region. The image sensors may further include a transfer gate electrode surrounding the floating diffusion region in the first impurity region. Also, the transfer gate electrode and the floating diffusion region may overlap the second impurity region.

Image sensors including a gate electrode surrounding a floating diffusion region

An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.

Image sensor and method of fabricating the same

An image sensor comprising an array of photoelectric conversion elements in a substrate, the photoelectric conversion elements being arranged in rows and columns extending in a first direction and a second direction respectively, a plurality of first junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common row, and a plurality of second junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common column, and a plurality of dielectric isolation regions in the substrate, that each isolate corner portions of neighboring photoelectric conversion elements. In one embodiment, the photoelectric conversion elements have a first pitch in the first direction and have a second pitch in the second direction and the first pitch is substantially equal for the photoelectric conversion elements of a common row, and the second pitch is substantially equal for the photoelectric conversion elements of a common column.

Image sensor with high fill factor pixels and method for forming an image sensor

An image sensor includes a semiconductor substrate of a first conductivity type, a photodiode of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located over the photodiode, a thin surface diffusion region formed on the surface of the HAD region, and a transfer gate located over the surface of the substrate adjacent the HAD region. The image sensor further includes a first channel region of the first conductivity type located in the substrate and aligned below the transfer gate, a second channel region of the second conductivity type located in the substrate between said transfer gate and the first channel region, and an floating diffusion region which is located in the substrate and which electrically contacts the second channel region.

Image sensors for reducing dark current and methods of fabricating the same

A method for manufacturing the same, wherein the monolithic ink-jet printhead includes a manifold for supplying ink, an ink chamber having a hemispheric shape, and an ink channel formed monolithically on a substrate; a silicon oxide layer, in which a nozzle for ejecting ink is centrally formed in the ink chamber, is deposited on the substrate; a heater having a ring shape is formed on the silicon oxide layer to surround the nozzle; a MOS integrated circuit is mounted on the substrate to drive the heater and includes a MOSFET and electrodes connected to the heater. The silicon oxide layer, the heater, and the MOS integrated circuit are formed monolithically on the substrate. Additionally, a DLC coating layer having a high hydrophobic property and high durability is formed on an external surface of the printhead.

Method for manufacturing a monolithic ink-jet printhead

An image sensor includes a photodiode formed in substrate, an insulating interlayer structure formed on the substrate, a metal structure formed in the insulating interlayer structure, a dummy pattern formed on the insulating interlayer structure, and a light-shielding layer pattern enclosing the dummy pattern. The dummy pattern is at least partially overlapped by the metal structure and the light-shielding layer pattern is at least partially overlapped by the photodiode.

Image sensor and method of manufacturing same

An inkjet printer head includes a semiconductor wafer having a nozzle portion for ejecting ink, an ink cartridge for supplying ink to the nozzle portion, and an ink ejection unit interposed between the ink cartridge and the semiconductor wafer. A method of forming the printer head includes forming an ink ejection unit having an opening on a semiconductor wafer to expose an upper surface of the wafer, etching the wafer through the opening in the ink ejection unit to form a nozzle in the semiconductor wafer, and attaching an ink cartridge to the upper surface of the semiconductor wafer.

Inkjet printer head and method of fabricating the same

A monolithic ink-jet printhead, and a method for manufacturing the same, wherein the monolithic ink-jet printhead includes a manifold for supplying ink, an ink chamber having a hemispheric shape, and an ink channel formed monolithically on a substrate; a silicon oxide layer, in which a nozzle for ejecting ink is centrally formed in the ink chamber, is deposited on the substrate; a heater having a ring shape is formed on the silicon oxide layer to surround the nozzle; a MOS integrated circuit is mounted on the substrate to drive the heater and includes a MOSFET and electrodes connected to the heater. The silicon oxide layer, the heater, and the MOS integrated circuit are formed monolithically on the substrate. Additionally, a DLC coating layer having a high hydrophobic property and high durability is formed on an external surface of the printhead.

Monolithic ink-jet printhead

A charge-coupled device (CCD) is provided having improved charge transfer efficiency. This CCD is a portion of an image sensor and manufactured by first laminating a first oxidation film and a first nitride film one after the other on a semiconductor substrate and then forming a plurality of first gate electrodes on the first nitride film at predetermined intervals apart. A second oxidation film is formed only on an upper surface and along side walls of each of the first gate electrodes. The first nitride film exposed between the first gate electrodes is removed and a second nitride film is formed on the exposed first oxidation film and the second oxidation film. A second gate electrode is then formed on the second nitride film between adjacent first gate electrodes. An image sensor is obtained in which leakage current density between the gate electrodes is reduced and the dielectric characteristic of a gate dielectric film is improved.

Method for manufacturing an image sensor

A charge-coupled device (CCD) is provides having improved charge transfer efficiency. This CCD is a portion of an image sensor and manufactured by first laminating a first oxidation film and a first nitride film one after the other on a semiconductor substrate and then forming a plurality of first gate electrodes on the first nitride film at predetermined intervals apart. A second oxidation film is formed only on an upper surface and along side walls of each of the first gate electrodes. The first nitride film exposed between the first gate electrodes is removed and a second nitride film is formed on the exposed first oxidation film and the second oxidation film. A second gate electrode is then formed on the second nitride film between adjacent first gate electrodes. An image sensor is obtained in which leakage current density between the gate electrodes is reduced and the dielectric characteristic of a gate dielectric film is improved.

Growing community of inventors

Hwaseong-si, South Korea

Jong-cheol Shin