Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Jong-Cheol Lee

Ki-Vin Im

Young-sun Kim

Jae-Hyun Yeo

Uk-Rae Cho

Hoon-Sang Choi

Ki-chul Kim

Jae-hyoung Choi

Cha-Young Yoo

Se-hoon Oh

Eun-ae Chung

Ki-yeon Park

Gab-Jin Nam

Hak-soo Yu

Youn-soo Kim

Young-Geun Park

Nam-Seog Kim

Kwang-Jin Lee

Sung-Tae Kim

Cha-young Yoo

Kyu-Hee Han

Ki-Yeon Park

Myeong-O Kim

Han-Mei Choi

Dong-Wook Kim

Sang-yeol Kang

Ha-Jin Lim

Sang-Yeol Kang

Seung-Han Lee

Yun-Seok Kim

Su-Chul Kim

Jung-Hun Seo

Jun-noh Lee

Kyoung-Ryul Yoon

Sung-hwan Kim

Sung-hae Lee

Jae-Hyoung Choi

Jin-Pil Heo

Hyun-Geun Byun

Jun-Noh Lee

Byung Wook Ahn

Jung-Il Ahn

Jae-young Ahn

Nam-Gun Kim

Sung-Il Cho

Jin-il Lee

Hak-Soo Yu

Kwang-Hee Lee

Jung-hee Chung

Uk-rae Cho

Yong-Jin Yoon

Suk-Jin Chung

Jin-tae Noh

Jung-Hee Chung

Cheong Hun Lee

Hyeong-Sik Choi

Byung-kook Sim

Cheol-se Lee

Chan-Hong Park

Hyun-wook Lee

Soo-hwan Kim

Eun-Ae Chung

Heung-ahn Kwon

Chun-hyung Chung

Kil-chul Kim

Ki-vin Lim

Ki-Vin Lim

Hong-bum Park

Jun-Seok An

Jee-Su Park

A gas injection apparatus, which can sequentially supply a substrate with at least two kinds of source gases reacting with each other in a container, and thin film deposition equipment including the gas injection apparatus, are provided. The gas injection apparatus includes a base plate, a first gas supply region protruding from the base plate, a second gas supply region protruding from the base plate and adjacent the first gas supply region, and a trench defined by a sidewall of the first gas supply region and a sidewall of the second gas supply region. The sidewall of the first gas supply region and the sidewall of the second gas supply region face each other and extend in a radial direction on the base plate.

Gas injection apparatus and thin film deposition equipment including the same

A method of forming an oxide layer. The method includes: forming a layer of reaction-inhibiting functional groups on a surface of a substrate; forming a layer of precursors of a metal or a semiconductor on the layer of the reaction-inhibiting functional groups; and oxidizing the precursors of the metal or the semiconductor in order to obtain a layer of a metal oxide or a semiconductor oxide. According to the method, an oxide layer having a high thickness uniformity may be formed and a semiconductor device having excellent electrical characteristics may be manufactured.

Method of forming an oxide layer and method of manufacturing semiconductor device including the oxide layer

Methods of manufacturing a semiconductor device including a multi-layer of dielectric layers may include forming a metal oxide layer on a semiconductor substrate and forming a multi-layer of silicate layers including metal atoms and silicon atoms, on the metal oxide layer. The multi-layer of silicate layers may include at least two metallic silicate layers having different silicon concentrations, which are a ratio of silicon atoms among all metal atoms and silicon atoms included in the metallic silicate layer.

Methods of fabricating semiconductor devices

An electronic device includes a lower layer, a complex dielectric layer on the lower layer, and an upper layer on the complex dielectric layer. The complex dielectric layer includes an amorphous metal silicate layer and a crystalline metal-based insulating layer thereon. Related fabrication methods are also discussed.

Integrated circuit devices including complex dielectric layers and related fabrication methods

Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.

Semiconductor device including insulating layer of cubic system or tetragonal system

Methods of manufacturing semiconductor devices including multilayer dielectric layers are disclosed. The methods include forming a multilayer dielectric layer including metal atoms and silicon atoms on a semiconductor substrate. The multilayer dielectric layer includes at least two crystalline metal silicate layers having different silicon concentrations. The multilayer dielectric layer may be used, for example, as a dielectric layer for a capacitor, or as a blocking layer for a nonvolatile memory device.

Methods of fabricating semiconductor devices including multilayer dielectric layers

In a method of forming a target layer having a uniform composition of constituent materials, a first precursor including a first central atom and a ligand is chemisorbed on a first reaction site of an object. The ligand or the first central atom is then removed to form a second reaction site. A second precursor including a second central atom is then chemisorbed on the second reaction site.

Methods forming high dielectric target layer

Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate.

Methods of removing water from semiconductor substrates and methods of depositing atomic layers using the same

A method of forming a semiconductor device includes forming a lower conductive pattern on a substrate, forming an insulating layer over the lower conductive pattern, forming a contact hole through the insulating layer to expose the lower conductive pattern, forming a first spacer along sides of the contact hole, and then forming a contact plug in the contact hole. The contact plug is formed so as to contact the lower conductive pattern.

Method of forming semiconductor device having contact plug

Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer are provided, the methods of forming the metal silicate layer include forming the metal silicate using a plurality of silicon precursors. The silicon precursors are homoleptic silicon precursors in which ligands bound to silicon have the same molecular structure.

Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer

A semiconductor device including a multilayer dielectric film and a method for fabricating the semiconductor device are disclosed. The multilayer dielectric film includes a type-one dielectric film having a tetragonal crystalline structure, wherein the type-one dielectric film comprises a first substance. The multilayer dielectric film also comprises a type-two dielectric film also having a tetragonal crystalline structure, wherein the type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the type-two dielectric film is greater than a dielectric constant of the type-one dielectric film.

Semiconductor device comprising multilayer dielectric film and related method

A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials.

Multi-dielectric films for semiconductor devices and methods of fabricating multi-dielectric films

Provided is an in-situ method of cleaning a vaporizer of an atomic layer deposition apparatus during a dielectric layer deposition process, to prevent nozzle blocking in the vaporizer and an atomic layer deposition apparatus. During the dielectric layer deposition process, the following steps are repeated: supplying a first source gas for dielectric layer deposition into a chamber of an atomic layer deposition apparatus; purging the first source gas; supplying a second source gas into the chamber of the atomic layer deposition apparatus; purging the second source gas, the in-situ method of cleaning the vaporizer is performed after supplying the first source gas for dielectric layer deposition and before supplying the first source gas again.

In-situ method of cleaning vaporizer during dielectric layer deposition process

Growing community of inventors

Seoul, South Korea

Jong-Cheol Lee