Samsung Electronics Co., Ltd.

Jong Chae Moon

Suk-Ho Joo

Jin Ra

Kyu-charn Park

Tae-earn Shim

Go Eun Lee

Soh Min Ahn

Yong Soung Lee

Joo Yeon Cho

Joo Yoon Bae

Guk Ho Gil

Jong Keun Cho

Young Chan Woo

Hyo Chan Song

Seo Lynn Park

Hyun-koock Shin

According to an embodiment, a system includes an electronic device, a server, and an output device. The electronic device may perform user authentication together with the server. The server may specify first content based on the user authentication and may transmit first metadata of the first content to the electronic device. The electronic device may visually output a first object representing the first content based on the first metadata, and transmit, when at least one object is selected of the output objects by the user, identification information of content represented by the selected object to the server. The server may output content corresponding to the identification information through the output device. Moreover, various embodiment found through the present disclosure are possible.

System for recommending content

An electronic device includes: a display; and at least one processor configured to identify one or more boundary values which divide settable values into a plurality of sections, based on context information related to the electronic device, and display a slider that can move within a slider track indicating the settable values through the display, wherein a first interval between settable values within a first section among the plurality of sections is different from a second section between settable values within a second section among the plurality of sections.

Electronic device for displaying slider track and slider and method of operating same

An electronic device and information display method are provided. The electronic device includes a memory configured to store at least one object, a display configured to output a screen associated with the at least one object, and a processor configured to functionally connect with the memory and the display. The processor controls to display a first object, associated with collected sensing information related to a human body, among objects stored in the memory, at a size on the display and to display a second object on the first object based on the sensing information. The processor modifies a size and region of the second object and a displayed motion of the second object according to accumulated sensing information and controls to output the modified second object on the first object.

Information display method and electronic device for supporting the same

Methods of producing ferroelectric capacitors where the electrodes are formed in a contact hole. These methods include the steps of forming an insulating layer on an integrated circuit substrate. A contact hole is then formed through the insulating layer layer to expose a region of the integrated circuit substrate and to define a storage node pattern. A layer of oxidation-resistant conductive material is formed in the contact hole and the insulating layer removed to define a first storage electrode by exposing the layer of oxidation-resistant conductive material. A ferroelectric layer is then formed on the first storage electrode and a second storage electrode is formed on the ferroelectric layer opposite the first storage electrode.

Methods of fabricating ferroelectric capacitors

A ferroelectric memory device of an MFIS FET structuring using a yttrium oxide film as a buffer film and a manufacturing method of the memory device are provided. The MFIS FET includes a p-type silicon substrate, a field oxide film formed in a device isolation region of the silicon substrate, a gate yttrium oxide film formed on the surface of the silicon substrate, a gate ferroelectric film formed on the gate yttrium oxide film, a gate TiN electrode formed on the gate ferroelectric film, and an n-type source/drain region formed in the silicon substrate of both sides of the gate TiN electrode. In this way, single crystals of the gate yttrium oxide film are easily formed resulting in the formation of a good-quality ferroelectric film on the yttrium oxide film.

Device and manufacturing method for a ferroelectric memory

A method of forming metal lines such as titanium and aluminum on a semiconductor wafer by sputtering at a high temperature, preferably in the range of approximately 500.degree. C. to 800.degree. C. This method decreases the contact resistance between the layers while reducing the number of processing steps.

Method for forming metal lines by sputtering

A ferroelectric memory device of an MFIS FET structure using a yttrium oxide film as a buffer film and a manufacturing method of the memory device are provided. The MFIS FET includes a p-type silicon substrate, a field oxide film formed in a device isolation region of the silicon substrate, a gate yttrium oxide film formed on the surface of the silicon substrate, a gate ferroelectric film formed on the gate yttrium oxide film, a gate TiN electrode formed on the gate ferroelectric film, and an n-type source/drain region formed in the silicon substrate of both sides of the gate TiN electrode. In this way, single crystals of the gate yttrium oxide film are easily formed resulting in the formation of a good-quality ferroelectric film on the yttrium oxide film.

A vacuum sputtering apparatus for forming metal lines on a semiconductor wafer, including an annular reactive gas injector and a silicon carbide chuck for direct uniform heating of the wafer to a high temperature, preferably in the range of approximately 500.degree. C. to 800.degree. C., thereby allowing the deposition of titanium and titanium nitride layers having uniform thickness and composition.

Sputtering apparatus for forming metal lines

A method for manufacturing an electrode, e.g., a gate electrode of a MOS transistor, and an electrode and MOS transistor manufactured in accordance with this method. The method includes the steps of forming a first diffusion preventing layer on an underlying layer, forming a mask pattern having an opening on the first diffusion preventing layer, forming a metal layer on a portion of the first diffusion preventing layer exposed by the opening in the mask pattern, forming a metal layer on the exposed portion of the first diffusion preventing layer, forming a second diffusion preventing layer on the resultant structure, etching back the second diffusion preventing layer to leave a remaining portion thereof on the metal layer, removing the mask pattern, and forming a third diffusion preventing layer on exposed portions of the remaining portion of the second diffusion preventing layer, exposed sidewalls of the metal layer, and exposed portions of the first diffusion preventing layer. Preferably, the first, second, and third diffusion preventing layers are comprsied of titanium nitride, and the metal layer is comprised of copper.

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Seoul, South Korea

Jong Chae Moon