Skhynix Inc.

Yonsei University

Jong Chae Kim

Jae Hyung Jang

Hoon Moo Choi

Hyung June Yoon

Jong Eun Kim

Jae Won Lee

Hyun Chul Sohn

Ho Young Kwak

Kyung Dong Yoo

Hee Do Na

Do Hwan Kim

An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.

Image sensing device

An image sensing device may include a pixel array. The pixel array includes a sensing region including a plurality of unit pixels, each unit pixel configured to detect incident light to generate photocharge indicative of the detected incident light, a bias field region doped with impurities and disposed along an edge of the sensing region and a contact portion connected to the bias field region to apply a bias voltage to the bias field region to move the photocharge in the sensing region.

An image sensing device is provided to include a pixel array of unit pixels, each pixel structured to respond to incident light to produce photocharges and including different photosensing sub-pixels at different locations within the unit pixel to detect incident light, different detection structures formed at peripheral locations of the different photosensing sub-pixels of the unit pixel, respectively, and configured to receive the photocharges that are generated by the different photosensing sub-pixels of and are carried by a current in the unit pixel, a unit pixel voltage node located at a center portion of the unit pixel and electrically coupled to electrically bias an electrical potential of the different photosensing sub-pixels, and a control circuit coupled to the different detection structures of the unit pixel to supply sub-pixel detection control signals to the different detection structures of the unit pixel, respectively.

An image sensing device is provided to include a pixel array including unit pixel blocks that are arranged in a first direction and a second direction crossing the first direction, each unit pixel block configured to generate pixel signals in response to incident light reflected from a target object. The unit pixel block includes normal first pixel configured to receive a portion of the incident light at a first arrival time and generate a first pixel signal in response to the incident light, and a second pixel configured to receive another portion of the incident light at a second arrival time and generate a second pixel signal in response to the incident light. The second arrival time is later than the first arrival time.

An image sensing device may include a first tap and a second tap configured to generate a hole current in a substrate, and capture photocharge which is generated by incident light and migrated by the hole current. The first and second taps may be disposed in vertex regions facing each other in a diagonal direction in one pixel, respectively.

An image sensor includes a pixel layer in which an active pixel array and an optical black pixel array are formed; a first anti-reflective layer which is formed over the active pixel array, and including a hafnium oxide layer with a high transmittance; and a second anti-reflective layer which is formed over the optical black pixel array, and including a hafnium oxide layer with a low transmittance.

Growing community of inventors

Icheon-si, South Korea

Jong Chae Kim