Samsung Electronics Co., Ltd.

Jong-Bong Park

Chel-jong Choi

Dong-Woo Lee

Wan-jun Park

Tae-gyu Kim

Soo-Hwan Jeong

Ju-Hye Ko

A method of synthesizing carbon nanotubes including forming a solution including an organometallic compound containing catalyst particles and a solvent, adding at least one support to the solution, wherein the carbon nanotubes are synthesized on a surface of the at least one support, and applying radiation to the solution to which the at least one support is added.

Method of synthesizing carbon nanotubes

A phase-change random access memory (PRAM) device including a plurality of nanowires and a method of manufacturing the same include: a lower structure including a plurality of contact plugs; the nanowires extending into the contact plugs from surfaces defining a respective terminal end of the contact plugs; and a phase-change layer formed on top of the nanowires. Therefore, a reset or a set current consumed by the PRAM device is significantly reduced.

Phase-change memory device including nanowires and method of manufacturing the same

An electron beam (EB) lithography method using a new material is provided. The method includes forming a thin layer using a Pb-based material; and patterning the thin layer by partially volatilizing the thin layer by irradiating electron beams. In this method, the thin layer formed of the Pb-based material is patterned using e-beams so that the linewidth of patterns formed on the thin layer can be greatly reduced.

Growing community of inventors

Osan-si, South Korea

Jong-Bong Park