Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Yonsei University

Industry-Academic Cooperation Foundation

Jong-Baek Seon

Sang Yoon Lee

Myung-Kwan Ryu

Sang-Yoon Lee

Tae-sang Kim

Kyung-bae Park

Hyun-Suk Kim

Kyoung-seok Son

Joon-seok Park

Seok-jun Seo

Sun-Jae Kim

Bon-Won Koo

Hyun-Jae Kim

Hyun-Soo Shin

Byung-Du Ahn

Gun-Hee Kim

Kee-chan Park

Mi-jeong Song

Bon Won Koo

Woong-Hee Jeong

Won-mook Choi

Jeong-il Park

Chil Hee Chung

Tae-Sang Kim

Joon-Seok Park

Seok-Jun Seo

Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.

Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors

Provided are semiconductor films, methods of forming the same, transistors including the semiconductor films, and methods of manufacturing the transistors. Provided are a semiconductor film including zinc (Zn), nitrogen (N), oxygen (O), and fluorine (F), and a method of forming the semiconductor film. Provided are a semiconductor film including zinc, nitrogen, and fluorine, and a method of forming the semiconductor film. Sputtering, ion implantation, plasma treatment, chemical vapor deposition (CVD), or a solution process may be used in order to form the semiconductor films. The sputtering may be performed by using a zinc target and a reactive gas including fluorine. The reactive gas may include nitrogen and fluorine, or nitrogen, oxygen, and fluorine.

Methods of forming semiconductor films and methods of manufacturing transistors including semiconductor films

According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

Semiconductor materials, transistors including the same, and electronic devices including transistors

A solution composition for forming an oxide semiconductor includes a metal oxide precursor, and one of a metal thioacetate and a derivative thereof.

Solution composition for forming oxide semiconductor, and oxide semiconductor and electronic device including the same

A method of preparing a thin film includes coating a thin film-forming composition on a substrate, and heat-treating the coated thin film-forming composition under a pressure less than 760 Torr. The thin film includes a compact layer having a thickness in a range of greater than 50 &#x212b; to about 20,000 &#x212b; and a refractive index in a range of about 1.85 to about 2.0.

Method of preparing thin film, thin film, apparatus for preparing thin film, and electronic device including thin film

A transistor may include a hole blocking layer between a channel layer including oxynitride and an electrode electrically connected to the channel layer. The hole blocking layer may be disposed in a region between the channel layer and at least one of a source electrode and a drain electrode. The channel layer may include, for example, zinc oxynitride (ZnON). A valence band maximum energy level of the hole blocking layer may be lower than a valence band maximum energy level of the channel layer.

Transistor, method of manufacturing the same, and electronic device including transistor

According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.

Transistors including a channel where first and second regions have less oxygen concentration than a remaining region of the channel, methods of manufacturing the transistors, and electronic devices including the transistors

A transistor may include a light-blocking layer that blocks light incident on a channel layer. The light-blocking layer may include a carbon-based material. The carbon-based material may include graphene oxide, graphite oxide, graphene or carbon nanotube (CNT). The light-blocking layer may be between a gate and at least one of the channel layer, a source and a drain.

Transistors and electronic devices including the transistors

A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.

Oxynitride channel layer, transistor including the same and method of manufacturing the same

Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.

Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film

A transistor may include a channel layer formed of an oxide semiconductor. The oxide semiconductor may include GaZnON, and a proportion of Ga content to a total content of Ga and Zn of the channel layer is about 0.5 to about 4.5 at %.

Transistors, methods of manufacturing the same, and electronic devices including transistors

A thin film patterning method may include forming a thin film by coating a precursor solution containing a precursor of metal oxide onto a substrate, soft baking the thin film, exposing the thin film to light by using a photomask, developing the thin film, and hard baking the developed thin film. The precursor may include metal acetate, for example, a zinc acetate-based material, and the metal oxide thin film may include zinc oxide (ZnO).

Thin film patterning method and method of manufacturing semiconductor device using the thin film patterning method

Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode.

Transistor having sulfur-doped zinc oxynitride channel layer and method of manufacturing the same

A panel structure includes a transistor including a gate electrode, a source electrode and a drain electrode, a power source line, a pixel electrode, and one or more contact plugs formed of a same material as the pixel electrode and electrically connecting the power source line and the source electrode.

Panel structure including transistor and connecting elements, display device including same, and methods of manufacturing panel structure and display device

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Yongin-si, South Korea

Jong-Baek Seon