Fidelix Co., Ltd.

Excel Semiconductor Inc.

Jong Bae Jeong

Seung Keun Lee

Sang Yong Lee

Hun Woo Kye

Ki Won Kwon

Hi Hyun Han

Seung Duck Kim

Provided is a flash memory device capable of efficiently performing a refresh operation. The flash memory device includes a normal memory array including a plurality of normal memory cells arranged in a matrix of word lines and bit lines, wherein the plurality of normal memory cells are divided into a plurality of memory blocks and are programmable and erasable; a refresh address generation unit configured to generate a refresh block address, wherein the refresh block address is sequentially increased in response to activation of a refresh driving signal; and a refresh driving unit driven to refresh a memory block specified by the refresh block address among the memory blocks of the normal memory array in a unit refresh frame, and generate the refresh driving signal. In the flash memory device, a refresh operation may be efficiently performed to fix a data disturbance.

Flash memory device having efficient refresh operation

Provided herein is a serial flash memory device and precharging method thereof in which a single local bit-line data is sensed in synchronization with a clock. The method includes precharging two or more local bit-lines in synchronization with a first clock; and disprecharging one of the two local bit-lines in synchronization with a second clock and sensing and amplifying data of the other local bit-line. Accordingly, two precharged local bit-lines are not adjacent to each other, thereby eliminating a coupling noise effect. In addition, the time for performing the precharging operation and the sensing operation is easily secured, compared to the prior precharging method in which corresponding local bit-lines are precharged at every clock.

Serial flash memory device and precharging method thereof

Growing community of inventors

Gwangju-si, South Korea

Jong Bae Jeong