Applied Materials, Inc.

Jonathon Simmons

Biagio Gallo

Andrew S Devaney

David Eugene Aberle

Majeed Foad

Dean C Jennings

Peter T Kindersley

Dennis W Wagner

John R Shelley

Methods and apparatus for cleaning electrostatic chucks in processing chambers are provided. The process comprises flowing a backside gas comprising a reactive agent into a zone in a process chamber, the zone defined by a space between a surface of an electrostatic chuck or of a cleaning station and a surface of a substrate. The surface of the electrostatic chuck is etched with the reactive agent to remove debris. An apparatus for cleaning an electrostatic chuck is also provided, the apparatus comprising: a process chamber; an elongate arm having a reach disposed through a wall of the process chamber; an electrostatic chuck attached to the elongate arm; a cleaning station located within the reach of the elongate arm; and a reactive gas source that is operatively connected to the cleaning station.

Electrostatic chuck cleaning during semiconductor substrate processing

A particle monitor in the process chamber of a semiconductor device manufacturing apparatus provides a measure of a flux of contaminant particles in the chamber. The flux is measured whilst process conditions are produced in the process chamber and a process parameter is adjusted in response to the measured flux in order to reduce this flux during the process. In an ion implanter, the particle sensor measures the flux of particles entrained with the ion beam at a location in front of the wafer being processed.

Semiconductor device manufacturing apparatus and a method of controlling a semiconductor device manufacturing process

A kinematic electrode mount is provided for an ion implanter in which an electrode insert member having an electrode body portion which defines an aperture, is inserted into an electrode support frame. In one embodiment, a first kinematic alignment pin of the insert member engages a first, groove-shaped kinematic alignment surface of the electrode support frame to align the first alignment pin in two orthogonal directions relative to the electrode support frame. In addition, a second kinematic alignment pin of the insert member engages a second kinematic alignment surface of the electrode support frame to align the insert member in a rotational orientation relative to the electrode support frame. A plurality of flanges of the insert member engage the electrode support frame to retain the insert member in the aligned position and to electrically couple the electrode insert member to the electrode support frame. A spring positioned between the electrode insert member and the electrode support frame biases the electrode insert member in the aligned and retained position relative to the electrode support frame. In another embodiment, the electrode support frame has alignment pins and the insert member has alignment slots.

Kinematic ion implanter electrode mounting

Dose uniformity of a scanning ion implanter is determined. A base beam current is measured at the beginning and/or the end of a complete scan over the whole substrate area. This base beam current is measured at a time when the measurement should be unaffected by outgassing from a substrate being implanted and a base dose distribution map is then calculated for the scan in question. During the scan itself beam instability events are detected and the magnitude and position in the scan of the detected instability events is measured. Corresponding deviations in the calculated base dose map are determined and subtracted from the previously calculated base dose distribution map to provide a corrected distribution map. By determining overall dose uniformity substractively in this way, good overall accuracy can be obtained with lesser accuracy in the measurement of the beam instability events.

Method of determining dose uniformity of a scanning ion implanter

An electrically insulating vacuum coupling for use in an ion implanter for connecting any two parts of the vacuum chamber housing together while maintaining the electrical potentials of the two parts. The coupling comprises an inner sleeve of ceramic material (e.g. Al O ) and an outer sleeve of a polymer/litharge mixture. The polymer may be a urethane polymer. Litharge is included in the material of the outer sleeve to absorb x-rays produced within the vacuum chamber. The coupling is particularly useful for coupling an ion source to the main housing of the vacuum chamber

Electrically insulating vacuum coupling

A performance parameter for an ion implanter is obtained by monitoring vacuum pressure in a vacuum chamber of the implanter to identify pulses of said pressure caused by outgassing from the wafer surfaces during respective scans or groups of scans of the wafer through the ion beam. The pressure values are integrated during the identified pulses to provide a series of pulse pressure integral values which provide the performance parameter. An increase in the integral values indicates deterioration in vacuum system performance.

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San Jose, CA, United States of America

Jonathon Simmons