International Business Machines Corporation

Superconductor Technologies Inc.

Headway Technologies, Incorporated

Leland Stanford Junior University

Jonathan Zanhong Sun

Daniel Christopher Worledge

Guohan Hu

Stuart Stephen Papworth Parkin

John Casimir Slonczewski

Luqiao Liu

Pouya Hashemi

Chung H Lam

John Kenneth DeBrosse

William Joseph Gallagher

Robert B Hammond

Bruce David Terris

Rolf Allenspach

Douglas J Scalapino

Chandrasekharan Kothandaraman

Solomon Assefa

Janusz Jozef Nowak

Simone Raoux

Stephen L Brown

Timothy W James

Lincoln C Bourne

Bruce Bennett Doris

Po-Kang Wang

Michael C Gaidis

Stuart Stephen Parkin

Christopher Safranski

Hemantha Wichramasinghe

Christopher Vincent Jahnes

Alejandro Gabriel Schrott

David William Abraham

Martin Michael Frank

Hemantha Kumar Wickramasinghe

Stephen Mark Rossnagel

Rasit Onur Topaloglu

Dennis Merton Newns

Philip Louis Trouilloud

Geoffrey W Burr

Gerhard Ingmar Meijer

Rudolf M Tromp

Gregory Costrini

Johannes Georg Bednorz

Arunava Gupta

Michael Joseph Rooks

Matthias Georg Gottwald

Gang Xiao

Xin Jiang

Suyog Gupta

Saba Zare

Theodore H Geballe

Bruce M Lairson

Kotb Jabeur

Kwo-Hsiung Young

Philippe P Lecoeur

A memory structure, i.e., magnetoresistive random access memory (MRAM) structure, is provided that includes a seeding area including at least a tunnel barrier seed layer located beneath a chemical templating layer that is wider than the magnetic tunnel junction (MTJ) structure that is located on the chemical templating layer. Redeposited metallic material is located on at least a sidewall of the tunnel barrier seed layer of the seeding area so as to shunt that area of the structure. The memory structure has reduced resistance with minimal tunnel magnetoresistance (TMR) loss penalty.

MRAM structure with enhanced magnetics using seed engineering

A memory device includes a first terminal and a second terminal; a magnetic tunnel junction coupled to the second terminal; wherein the magnetic tunnel junction comprises a magnetic free layer, and the magnetic tunnel junction is configured to be displaced by a plurality of distances from a center position of the device; a nonmagnetic metallic spin harvesting conductor coupled to the magnetic tunnel junction; wherein the nonmagnetic metallic spin harvesting conductor has a lateral dimension that is larger than that of the magnetic tunnel junction; an electrically insulating spin conductor coupled to the nonmagnetic metallic spin harvesting conductor; wherein the electrically insulating spin conductor has relatively less electrical conductivity than the nonmagnetic metallic spin harvesting conductor; wherein the nonmagnetic metallic spin harvesting conductor collects spin current from the electrically insulating spin conductor; and a spin orbit conduction channel coupled to the electrically insulating spin conductor and to the first terminal.

Memory device with spin-harvesting structure

A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, forming a second magnetic tunnel junction stack on the spin conducting layer, and forming a dielectric spacer layer on surfaces of the spin conducting layer and the second magnetic tunnel junction stack. The second magnetic tunnel junction stack has a width that is less than a width of the first magnetic tunnel junction stack. Also, a width of the spin conducting layer increases in a thickness direction from a first side of the spin conducting layer adjacent to the second magnetic tunnel junction stack to a second side of the spin conducting layer adjacent to the first magnetic tunnel junction stack.

Double magnetic tunnel junction device

A magnetic memory device including a magnetic tunnel junction (MTJ) pillar containing a stable resonant synthetic antiferromagnet (SAF) reference layered structure in which the ferromagnetic resonance characteristics of a polarizing magnetic layer of the SAF reference layered structure are substantially matched to at least a first magnetic reference layer within the SAF reference layered structure. By substantially matching the ferromagnetic resonance characteristics of the polarizing magnetic layer to at least the first magnetic reference layer, a MTJ pillar is provided in which the dynamic stability of the polarizing magnetic layer can be improved, and undesirable magnetic reference layer instability related write-errors can be mitigated.

Resonant synthetic antiferromagnet reference layered structure

A method for forming a memory device that includes providing a free layer of an alloy of cobalt (Co), iron (Fe) and boron (B) overlying a reference layer; and forming metal layer comprising a boron (B) sink composition atop the free layer. Boron (B) may be diffused from the free layer to the metal layer comprising the boron sink composition. At least a portion of the metal layer including the boron (B) sink composition is removed. A metal oxide is formed atop the free layer. The free layer may be a crystalline cobalt and iron alloy. An interface between the metal oxide and free layer can provide perpendicular magnetic anisotropy character.

In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers

A true random number generator (TRNG) device having a magnetic tunnel junction (MTJ) structure coupled to a domain wall wire. The MTJ structure is formed of a free layer (FL) and a reference layer (RL) that sandwiches a tunnel barrier layer. The free layer has anisotropy energy sufficiently low to provide stochastic fluctuation in the orientation of the magnetic state of the free layer via thermal energy. The domain wall wire is coupled to the MTJ structure. The domain wall wire has a domain wall. Movement of the domain wall tunes a probability distribution of the fluctuation in the orientation of the magnetic state of the free layer. The domain wall can be moved by application of a suitable current through the wire to tune the probability distribution of 1's and 0's generated by a readout circuit of the TRNG device.

Magnetic tunnel junction based true random number generator

A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, and forming a second magnetic tunnel junction stack on the spin conducting layer. The second magnetic tunnel junction stack has a width that is greater than a width of the first magnetic tunnel junction stack.

Inverted wide base double magnetic tunnel junction device

A magnetic tunnel junction (MTJ) device includes a cylindrically-shaped pillar structure and a first ferromagnetic layer disposed on at least a portion of the pillar structure. The first ferromagnetic layer exhibits a magnetization that is changeable in the presence of at least one of an applied bias and heat. The MTJ device further includes a dielectric barrier disposed on at least a portion of the first ferromagnetic layer and a second ferromagnetic layer disposed on at least a portion of the dielectric barrier. The second ferromagnetic layer exhibits a magnetization that is fixed. The MTJ device is configured such that the first and second ferromagnetic layers and the dielectric barrier concentrically surround the pillar structure.

Magnetic tunnel junction having all-around structure

A modified double magnetic tunnel junction (mDMTJ) structure is provided which includes a non-magnetic, spin-conducting metallic layer sandwiched between a magnetic free layer and a first tunnel barrier layer; the first tunnel barrier layer contacts a first magnetic reference layer. A second tunnel barrier layer is located on the magnetic free layer and a second magnetic reference layer is located on the second tunnel barrier layer. The mDMTJ structure of the present application exhibits efficient switching (at a low current) and speedy readout (high TMR).

Modified double magnetic tunnel junction structure suitable for BEOL integration

A magneto-resistance random access memory (MRAM) cell includes a transistor, a wire and a magnetic tunnel junction (MTJ). The MTJ includes a fixed layer of fixed magnetic polarity electrically connected with the transistor, a free layer of variable magnetic polarity electrically connected with the wire and an insulator between the fixed and free layers. First current passed through the wire destabilizes the variable magnetic polarity of the free layer. Second current passed through the transistor in one of two directions during first current passage through the wire directs the variable magnetic polarity of the free layer toward a parallel or anti-parallel condition with respect to the fixed magnetic polarity of the fixed layer. A ceasing of the first current prior to a ceasing of the second current sets the variable magnetic polarity of the free layer in the parallel or anti-parallel condition.

Spin hall write select for magneto-resistive random access memory

A technique relates to a magnetic device. A configuration in a memory layer of the magnetic device is adjusted, the configuration affecting stochastic fluctuations in a free magnetic layer of a magnetic tunnel junction coupled to the memory layer. The stochastic fluctuations are used to define a random number according to the configuration in the memory layer.

Spin-based storage element

Improved spin hall MRAM designs are provided that enable writing of all of the bits along a given word line together using a separate spin hall wire for each MTJ. In one aspect, a magnetic memory cell includes: a spin hall wire exclusive to the magnetic memory cell; an MTJ disposed on the spin hall wire, wherein the MTJ includes a fixed magnetic layer separated from a free magnetic layer by a tunnel barrier; and a pair of selection transistors connected to opposite ends of the spin hall wire. An MRAM device and method for operation thereof are also provided.

Three terminal spin hall MRAM

A ferroelectric device includes a first electrode and a second electrode that each comprise one or more electrically conductive layers. The ferroelectric device also includes a layer of ferroelectric material disposed between, and in electrical communication with, the first electrode and the second electrode. In some embodiments, the first electrode and/or the second electrode include a stepped vertical protrusion that protrudes into the layer of ferroelectric material. In certain embodiments, the layer of ferroelectric material comprises a region of reduced lateral width. The region of reduced lateral width and/or the stepped vertical protrusion enables changing a polarity of a portion of the ferroelectric material that is proximate to those features, in response to a programming signal applied across the first and second electrodes, without changing a polarity of one or more other portions of the layer of ferroelectric material. A corresponding method is also disclosed herein.

Domain wall control in ferroelectric devices

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Shrub Oak, NY, United States of America

Jonathan Zanhong Sun