Actel Corporation, Inc.

Microsemi Soc Corporation

Microchip Technology Inc.

Other

Actal Corporation

Jonathan W Greene

John L McCollum

Volker Hecht

Gregory William Bakker

Abbas A El Gamal

Frank W Hawley

Douglas C Galbraith

Wenyi Feng

Joel D Landry

William C Plants

Theodore M Speers

Robert M Salter, Iii

Fei Li

Marcel Derevlean

Khaled A El-Ayat

Justin M Reyneri

Dirk Kannemacher

Ta-Pen R Guo

Sinan Kaptanoglu

Fethi Dhaoui

Arunangshu Kundu

Christine M Tarby

Vidyadhara Bellippady

Kenichiro Kataoka

Hiroko Tanaka

Tatsuki Shiota

Wilna J Moree

Suhail Zain

Noriaki Endo

Vidya Bellippady

Kenneth R Irving

Kristofer Vorwerk

Aaron Severance

Joel Vandergriendt

Val Pevzner

Doug Barnum

Michele Ramirez Weinhouse

Shinsuke Yamagami

A method and apparatus for embedding a microprocessor in a programmable logic device (PLD), where the microprocessor has a logic unit that can operate in two modes. A first mode is a general purpose mode running at least one general purpose process related to the PLD, and a second mode is a fixed function mode emulating a fixed function for use by logic configured into a fabric of the PLD (fabric). A memory unit is coupled to the logic unit and to the fabric, and the fabric is operable for transferring signals with the logic unit in relation to the fixed function.

Embedded processor supporting fixed-function kernels

A logic cell for a programmable logic integrated circuit apparatus includes a K-input lookup table (LUT) circuit having a primary output Y, wherein Y is any function of K inputs, and at least one additional output (F). A carry circuit receives the outputs of the LUT and a carry-in input CI. The carry circuit generates a sum output S and a carry-out output CO. The carry circuit can be configured to provide S=CI and select CO from the set {0, 1, F}. The carry circuit can alternatively be configured to provide S=EXOR(Y, CI) and select CO from the set {0, 1, F}. The carry circuit can alternatively be configured to provide S=EXOR(Y, CI) and CO=CI if Y=q or to select CO from the set {0, 1, F} if Y&#x2260;q, where q is a pre-determined value (e.g., such as 0 or 1).

Logic cell for programmable gate array

A method for implementing a neural network system in an integrated circuit includes presenting digital pulses to word line inputs of a matrix vector multiplier including a plurality of word lines, the word lines forming intersections with a plurality of summing bit lines, a programmable Vt transistor at each intersection having a gate connected to the intersecting word line, a source connected to a fixed potential and a drain connected to the intersecting summing bit line, each digital pulse having a pulse width proportional to an analog quantity. During a charge collection time frame charge collected on each of the summing bit lines from current flowing in the programmable Vt transistor is summed. During a pulse generating time frame digital pulses are generated having pulse widths proportional to the amount of charge that was collected on each summing bit line during the charge collection time frame.

Method for combining analog neural net with FPGA routing in a monolithic integrated circuit

A user programmable integrated circuit includes a user-programmable routing network including a plurality of interconnect conductors selectively couplable to one another by user-programmable elements. A plurality of matrix vector multipliers, each have a plurality of word lines, each word line coupled to a different first one of the one of the interconnect conductors of the user-programmable routing network, the word lines forming intersections with a plurality of summing bit lines, a programmable Vt transistor at each intersection having a gate connected to the intersecting word line, a source connected to a fixed potential and a drain connected to the intersecting summing bit line. A charge-to-pulse-width converter circuit is associated with each one of the matrix vector multipliers, each having an input coupled to one of the summing bit lines, and a pulse output coupled to a different second one of the interconnect conductors of the user-programmable routing network.

Apparatus and method for combining analog neural net with FPGA routing in a monolithic integrated circuit

A random-access memory cell includes first and second voltage supply nodes, first and second complementary output nodes, first and second complementary bit lines associated with the memory cell, and a word line associated with the memory cell. Pairs of series-connected cross-coupled p-channel and n-channel hybrid FinFET transistors are connected between the voltage supply nodes, the first bit line coupled to the first output node, and the second bit line coupled to the second output node.

SRAM configuration cell for low-power field programmable gate arrays

A logic cell for a programmable logic integrated circuit having K function inputs, where K is the largest number such that the logic cell can compute any function of K inputs, and where the logic cell is configurable to implement one bit of a counter in parallel with any independent function of K-of the K inputs.

FPGA logic cell with improved support for counters

A resistive random-access memory device formed on a semiconductor substrate includes a first interlayer dielectric formed over the semiconductor substrate and includes a first via. A chemical-mechanical-polishing stop layer is formed over the interlayer dielectric. A lower metal layer formed in the first via has a top surface extending above a top surface of the chemical-mechanical-polishing stop layer. A dielectric layer is formed over the chemical-mechanical-polishing stop layer and is in electrical contact with the lower metal layer. A barrier metal layer is formed over the dielectric layer. Edges of the dielectric layer and the first barrier metal layer extend beyond outer edges of the first via. A second interlayer dielectric layer including a second via is formed over the dielectric layer. An upper metal layer formed in the second via in electrical contact with the barrier metal layer.

Front to back resistive random-access memory cells

A configuration memory cell includes a latch portion including a cross-coupled latch having complementary output nodes, and a programmable read-only memory (PROM) portion coupled to one of the complementary output nodes of the latch portion, the PROM portion including a programmable and erasable ReRAM device.

Hybrid configuration memory cell

A 4-input lookup table module including eight first-rank 2-input multiplexers, four second-rank multiplexers, two third-rank multiplexers, and one fourth-rank multiplexer, the first-rank through fourth-rank multiplexers forming a tree structure. A select input of the fourth-rank multiplexer is coupled to a first input node. Select inputs of the third-rank multiplexers are coupled to a second input node. Select inputs of a first and a second adjacent ones of the second rank 2-input multiplexers are electrically isolated from select inputs of a third and a fourth adjacent ones of the second rank 2-input multiplexers. Select inputs of a first through a fourth adjacent ones of the first rank 2-input multiplexers are electrically isolated from select inputs of a fifth through an eighth adjacent ones of the first rank 2-input multiplexers.

Efficient lookup table modules for user-programmable integrated circuits

An architecture in a user-programmable integrated circuit includes a hard logic block having inputs and outputs, a first group of user-configurable general-purpose routing resources coupled to first selected ones of the inputs of the hard logic block, a soft logic block having inputs and outputs, first selected ones of the inputs of the soft logic block coupled to the first group of user-configurable general-purpose routing resources, first selected ones of the outputs of the soft logic block having dedicated connections to second selected ones of the inputs to the hard logic block, and a second group of user-configurable general-purpose routing resources coupled to second selected ones of the outputs of the soft logic block and to first selected ones of the outputs of the hard logic block.

FPGA math block with dedicated connections

A resistive random-access memory device formed on a semiconductor substrate includes an interlayer dielectric formed over the semiconductor substrate and includes a first via. A chemical-mechanical-polishing stop layer is formed over the interlayer dielectric. A lower metal layer formed in the first via presents a substantially planar top surface. A dielectric layer is formed over the chemical-mechanical-polishing stop layer and is in electrical contact with the lower metal layer. A barrier metal layer is formed over the dielectric layer. Edges of the dielectric layer and the first barrier metal layer form an aligned stack having edges extending beyond outer edges of the first via. A dielectric barrier layer including a second via is formed over the aligned stack and at least a portion of the chemical-mechanical-polishing stop layer. An upper metal layer formed in the second via in electrical contact with the barrier metal layer.

Front to back resistive random access memory cells

A random access memory circuit adapted for use in a field programmable gate array integrated circuit device is disclosed. The FPGA has a programmable array with logic modules and routing interconnects programmably coupleable to the logic modules and the RAM circuit. The RAM circuit has three ports: a first readable port, a second readable port, and a writeable port. The read ports may be programmably synchronous or asynchronous and have a programmably bypassable output pipeline register. The RAM circuit is especially well adapted for implementing register files. A novel interconnect method is also described.

FPGA RAM blocks optimized for use as register files

A layout arrangement for a resistive random access memory cell includes an active area, a polysilicon row address line over the active region, a metal column address line running orthogonal to the row address line and having an active region contact portion extending over the active region and having a contact to the active region. A metal output line runs parallel to the column address line over the active region. A first cell contact region intersects with the output line and has a contact to the active region. A first metal cell contact region forms an intersection with the first cell contact region. A first resistive random access memory device is formed at the intersection of the first cell contact region and the output line. A second resistive random access memory device is formed at the intersection of the first cell contact region and the first cell contact region.

Resistive random access memory cells

A multi-state static RAM cell includes N NOR gates. Each NOR gate has N&#x2212;1 inputs and one output. The output of each NOR gate is coupled to a different bit line. Each NOR gate has its inputs connected to the outputs of each of the other NOR gates.

Multi-state configuration RAM cell

Growing community of inventors

Palo Alto, CA, United States of America

Jonathan W Greene