Massachusetts Institute of Technology

Dartmouth College

Jonathan T Bessette

Lionel Cooper Kimerling

Jurgen Michel

Jifeng Liu

Rodolfo E Camacho-Aguilera

Yan Cai

Elsa Garmire

Ashifi Gogo

In a method for electrically doping a semiconducting material, a layer of germanium is formed having a germanium layer thickness, while in situ incorporating phosphorus dopant atoms at a concentration of at least about 5&#xd7;10cmthrough the thickness of the germanium layer during formation of the germanium layer. Additional phosphorus dopant atoms are ex situ incorporated through the thickness of the germanium layer, after formation of the germanium layer, to produce through the germanium layer thickness a total phosphorus dopant concentration of at least about 2&#xd7;10cm.

Method for high-concentration doping of germanium with phosphorous

In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer. The formed germanium active layer is doped with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device.

High-concentration active doping in semiconductors and semiconductor devices produced by such doping

Systems, methods and sensors detect changes in incident optical radiation. Voltage is applied across one or more active areas of a detector while the incident optical radiation illuminates the active areas. Current is sensed across one or more of the active areas, a change in the current being indicative of the changes in incident optical radiation.

Systems and methods that detect changes in incident optical radiation

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Essex Junction, VT, United States of America

Jonathan T Bessette