Gsi Group Corporation

Gsi Lumonics Corporation

General Scanning, Inc.

Ipg Photonics Corporation

Electro Scientific Industries, Inc.

Jonathan S Ehrmann

Donald J Svetkoff

Donald Victor Smart

James J Cordingley

Shepard D Johnson

Joohan Lee

Bo Gu

Donald B T Kilgus

Joseph V Lento

Yun Fee Chu

Bruce L Couch

Warren Lin

Michael Plotkin

Steven P Cahill

David M Filgas

Bradley L Hunter

Joseph J Griffiths

Kurt A Pelsue

Jeffrey Dellert Kmetec

Arkady Savikovsky

Felix Stukalin

Alexey V Avdokhin

Timothy I Fillion

Andrei Babushkin

Anton Theodore Kitai

Rainer Schramm

Pancho Tzankov

Pierre-Yves Mabboux

Mustafa Coskun

You Chia Li

Roger Dowd

William Lauer

Stuart A Dodson, Ii

Kevin E Sullivan

Jens Zink

Gregg A Metzger

Markus M Weber

Patrick S Duffy

A multiple wavelength laser processing system is configured with a multiple wavelength laser source for generating a multiple wavelength coaxial laser processing beam. The laser processing system further includes a multiple wavelength optical system to deliver the coaxial laser processing beam to a laser-material interaction zone on the surface of a workpiece such that each of the a first and a second laser wavelengths in the processing beam impinge at least a portion of the interaction zone as respective first and second concentric laser spots. The multiple wavelength optical system includes a multiple wavelength beam collimator, a configurable chromatic optic, and a laser processing focus lens, wherein the configurable chromatic optic provides an adjustment to the relative focus distance of the first and second laser wavelengths.

System and method laser for processing of materials

A multiple wavelength laser processing system is configured with a multiple wavelength laser source for generating a multiple wavelength coaxial laser processing beam. The laser processing system further includes a multiple wavelength optical system to deliver the coaxial laser processing beam to a laser-material interaction zone on the surface of a workpiece such that each of the first and a second laser wavelengths in the processing beam impinge at least a portion of the interaction zone as respective first and second concentric laser spots. The multiple wavelength optical system includes a multiple wavelength beam collimator, a configurable chromatic optic, and a laser processing focus lens, wherein the configurable chromatic optic provides an adjustment to the relative focus distance of the first and second laser wavelengths.

Laser processing systems and methods image a multiple core array to a work surface in a multiple processing beam array. An optical system separates processing beams and converges the beams toward the work surface and focuses each beam of the array at or near the work surface. A central axis with access for filler material flow to the work surface is provided. The processing beam array and central filler material feed provide omni-directional additive laser processing capability.

Additive laser machining systems and methods

A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.

Methods and systems for thermal-based laser processing a multi-material device

A method, system and scan lens for use therein are provided for high-speed, laser-based, precise laser trimming at least one electrical element along a trim path. The method includes generating a pulsed laser output with a laser, the output having one or more laser pulses at a repetition rate. A fast rise/fall time, pulse-shaped q-switched laser or an ultra-fast laser may be used. Beam shaping optics may be used to generate a flat-top beam profile. Each laser pulse has a pulse energy, a laser wavelength within a range of laser wavelengths, and a pulse duration. The wavelength is short enough to produce desired short-wavelength benefits of small spot size, tight tolerance, high absorption and reduced or eliminated heat-affected zone (HAZ) along the trim path, but not so short so as to cause microcracking. In this way, resistance drift after the trimming process is reduced.

Method and system for high-speed precise laser trimming and scan lens for use therein

The present invention relates to the field of laser processing methods and systems, and specifically, to laser processing methods and systems for laser processing multi-material devices. Systems and methods may utilize high speed deflectors to improve processing energy window and/or improve processing speed. In some embodiments, a deflector is used for non-orthogonal scanning of beam spots. In some embodiment, a deflector is used to implement non-synchronous processing of target structures.

Link processing with high speed beam deflection

Laser-based methods and systems for removing one or more target link structures of a circuit fabricated on a substrate includes generating a pulsed laser output at a predetermined wavelength less than an absorption edge of the substrate are provided. The laser output includes at least one pulse having a pulse duration in the range of about 10 picoseconds to less than 1 nanosecond, the pulse duration being within a thermal laser processing range. The method also includes delivering and focusing the laser output onto the target link structure. The focused laser output has sufficient power density at a location within the target link structure to reduce the reflectivity of the target link structure and efficiently couple the focused laser output into the target link structure to remove the target link structure without damaging the substrate.

Laser-based method and system for removing one or more target link structures

A reflective metrological scale has a metal tape substrate and a scale pattern of elongated side-by-side marks surrounded by reflective surface areas of the substrate. Each mark has a furrowed cross section and may have a depth in the range of 0.5 to 2 microns. The central region of each mark may be rippled and darkened to provide an enhanced optical reflection ratio with respect to surrounding surface areas. A manufacturing method includes the repeated steps of (1) creating a scale mark by irradiating the substrate surface at a mark location with overlapped pulses from a laser, each pulse having an energy density of less than about 1 joule per cm2, and (2) changing the relative position of the laser and the substrate by a displacement amount defining a next mark location on the substrate at which a next mark of the scale is to be created.

Optical metrological scale and laser-based manufacturing method therefor

A laser-based method of removing a target link structure of a circuit fabricated on a substrate includes generating a pulsed laser output at a pre-determined wavelength less than an absorption edge of the substrate. The laser output includes at least one pulse having a pulse duration in the range of about 10 picoseconds to less than 1 nanosecond, the pulse duration being within a thermal laser processing range. The method also includes delivering and focusing the laser output onto the target link structure. The focused laser output has sufficient power density at a location within the target structure to reduce the reflectivity of the target structure and efficiently couple the focused laser output into the target structure to remove the link without damaging the substrate.

Laser-based system for memory link processing with picosecond lasers

Methods and systems for laser soft marking, especially for semiconductor wafers and devices, are provided. A laser-marking system for marking a semiconductor wafer to form a softmark on the wafer is provided. The system includes a laser subsystem for generating one or more laser pulses and a controller operatively connected to the laser subsystem. The controller sets a laser pulse width of the one or more laser pulses to selectively provide one or more laser output pulses having one or more set pulse widths that affect the depth of a softmark that is to be formed. The mark depth is substantially dependent on the one or more set pulse widths. The controller further sets a pulse energy of the one or more output pulses to selectively provide the one or more output pulses having a set total output energy that is within an acceptable process energy window for producing the softmark.

Method and system for laser soft marking

A method and system for high-speed, precise micromachining an array of devices are disclosed wherein improved process throughput and accuracy, such as resistor trimming accuracy, are provided. The number of resistance measurements are limited by using non-measurement cuts, using non-sequential collinear cutting, using spot fan-out parallel cutting, and using a retrograde scanning technique for faster collinear cuts. Non-sequential cutting is also used to manage thermal effects and calibrated cuts are used for improved accuracy. Test voltage is controlled to avoid resistor damage.

Method and system for high-speed, precise micromachining an array of devices

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Sudbury, MA, United States of America

Jonathan S Ehrmann