Mitsubishi Electric Corporation

Mitsubishi Electric R&d Centre Europe B.v.

Jonathan Robinson

Stefan Mollov

Jeffrey Ewanchuk

Julio Brandelero

Julio Cezar Brandelero

A method for determining the junction temperature of at least one die of a semiconductor power module, the semiconductor power module being composed of plural dies connected in parallel and switching between conducting and non conductor states according to pattern cycles, the method comprises the steps of: disabling the conducting of the at least one die during at least a fraction of one switching cycle, applying a current limited voltage to the gate of the at least one die during a period of time of the cycle wherein the at least one die is not conducting, the resulting voltage excursion having a value that does not enable the die to be conducting, measuring the voltage at the gate of the die, deriving from the measured voltage a temperature variation of the junction of the at least one die or the temperature of the junction of the die.

Method and device for determining junction temperature of die of semiconductor power module

The present invention concerns a method for controlling the temperature of a multi-die power module, comprising:

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Rennes, France

Jonathan Robinson