Applied Materials, Inc.

Jonathan Robert Bakke

Mei Yin Chang

Xinyu Fu

Vikash Banthia

Guoqiang Jian

Srinivas Gandikota

Seshadri Ganguli

Dien-Yeh Wu

Yixiong Yang

Yu Lei

Kai Wu

Wei V Tang

Kazuya Daito

Yi Xu

Diwakar N Kedlaya

Sundar Ramamurthy

Zubin Huang

Juan Carlos Rocha

Fang Ruan

Chi-Chou Lin

Feiyue Ma

Pulkit Agarwal

Sarah Langlois White

Systems and methods used to deliver a processing gas having a desired diborane concentration to a processing volume of a processing chamber are provided herein. In one embodiment a system includes a borane concentration sensor. The borane concentration sensor includes a body and a plurality of windows. Here, individual ones of the plurality of windows are disposed at opposite ends of the body and the body and the plurality of windows collectively define a cell volume. The borane concentration sensor further includes a radiation source disposed outside of the cell volume proximate to a first window of the plurality of windows, and a radiation detector disposed outside the cell volume proximate to a second window of the plurality of windows.

Precursor delivery system and methods related thereto

Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

Methods for forming low-resistance contacts through integrated process flow systems

Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WCl) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.

Methods for etching via atomic layer deposition (ALD) cycles

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Sunnyvale, CA, United States of America

Jonathan Robert Bakke