California Institute of Technology

US Government as Represented by the Secretary of the Army

The Uab Research Foundation (the University of Alabama at Birmingham)

Jonathan P Dowling

Colin P Williams

Michael Scalora

Mark J Bloemer

Charles M Bowden

Michael D Tocci

Giovanni Della Rossa

William C Pittman

Richard L Fork

Rachel J Flynn

Senter B Reinhardt, Jr

A system of etching using quantum entangled particles to get shorter interference fringes. An interferometer is used to obtain an interference fringe. N entangled photons are input to the interferometer. This reduces the distance between interference fringes by n, where again n is the number of entangled photons.

Lithography using quantum entangled particles

Lithography system using quantum entangled photons

The photonic band gap (PBG) dual-spectrum sensor utilizes the frequency-selective properties of a photonic band gap device constructed in accordance with this invention to separate incident electromagnetic wave into two frequency bands. The parameters of the PBG device are chosen so that one frequency band is transmitted through the device with low attenuation while the second band is reflected with low attenuation from the front face of the device. This separation of the two frequency bands allows separate detection processes to be performed to recover the information content of the two signals before the information is fused in subsequent signal processing operation. Such a PBG device would be useful in missile seekers that seek to distinguish a target object from its background.

Photonic band gap dual-spectrum sensor

A photonic signal is applied to a photonic bandgap structure having a photonic band edge transmission resonance at the frequency of the photonic signal and having a photonic band edge transmission resonance bandwidth which is at least as wide as the bandwidth of the photonic signal. When a photonic band edge transmission resonance is matched to the photonic signal which is being transmitted, a controllable delay is imparted to the photonic signal without significantly altering the photonic signal itself.

Photonic bandgap apparatus and method for delaying photonic signals

An optical switch in a one-dimensional multilayer dielectric stack having a photonic band gap, composed of at least two groups of layers of dielectric material whose operating wavelength is near the edge of said photonic band gap. At least one layer of each of the groups is composed of a nonlinear c.sub.3 dielectric material, which creates an intensity-dependent shift in the location of the band gap and produces a dynamical change in the transmissive and reflective properties of the multilayer dielectric stack in response to changes in the intensity of light or the transmittance of electromagnetic radiation passing through the multilayer dielectric stack. The width of the photonic band gap is determined by the differences between the refractive indices of the nonlinear dielectric material and that of the other layers of dielectric material in the multilayer dielectric stack.

Optical switch that utilizes one-dimensional, nonlinear, multilayer

A new optical diode is disclosed that permits unidirectional transmission of light, the direction of transmission depending on the direction of incidence. The diode comprises a stack of alternating layers of a low-index material and a high-index material. The layers are arranged within the stack such that there is spatial anisotropy of optical pathlengths in the stack and at least the low-index layers or the high-index layers have an optical nonlinearity, either inherently or by doping. At sufficiently high incident intensifies and appropriate wavelengths, such a diode exhibits partial transmission of input light incident from one direction while reflecting almost totally input light incident from the opposite direction.

Photonic band edge optical diode

Growing community of inventors

Huntsville, AL, United States of America

Jonathan P Dowling