Intel Corporation

Jonathan Nick Spitz

Sin Sim Tan

Suresh S Chittor

Chih-Cheh Chen

Stephen T Flannagan

Roger I Kung

Stephen R Mooney

Aaron K Martin

Matthew B Haycock

Michael Sandhinti

Perry H Pelley, Iii

Robert S Riley

Douglas J Covert

A variable-delay circuit on an integrated circuit is used to delay a periodic strobe signal. In normal operation, the strobe signal can be shifted 90 degrees to center it within a data bit cell. In test mode, it can also be shifted up to 270 degrees in N increments to measure the effective input latch setup and hold timings. The variable-delay circuit comprises a voltage-mixing interpolator circuit to produce phase delays in N increments. The variable-delay circuit can incorporate an existing delay locked loop. Also described are an electronic system, a data processing system, and various methods of performing on-chip testing and calibration.

Digital variable-delay circuit having voltage-mixing interpolator and methods of testing input/output buffers using same

Method and apparatus for processing serial bus read requests in a memory controller when the memory controller interfaces to both a pipelined bus and a serial bus. According to the method, the read request message is received and is split into several atomic transactions. The atomic transactions are issued on the pipelined bus. Data related to the several atomic transactions is stored in a queue. The requested data is read from the queue and placed in a response message on the serial bus.

Coherent variable length reads from system memory

Coherent variable length reads which implicates multiple cache lines by

A method for testing an MOS, dynamic random-access memory employing full capacitance dummy cells is described. During probe testing a potential higher than the reference potential is applied to the dummy cells when reading binary zeroes from the memory and a potential lower than the reference potential is applied to the dummy cells when reading binary zeroes from the memory. This testing procedure detects weak cells and amplifiers and helps present the packaging of defective parts. In addition, a simplified means for programming redundant elements is described which requires substantially less substrate area than previous methods.

Testing method and apparatus for dram

An MOS dynamic RAM organized in a byte-wide arrangement is described. An internal bus is used for multiplexed column address signals and data. Other multiplexing reduced the lines associated with the input/output circuits. A unique power-on circuit automatically resets clock generators if they are not operative after power is applied.

Byte-wide dynamic RAM with multiplexed internal buses

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Portland, OR, United States of America

Jonathan Nick Spitz