Aeluma, Inc.

Mitsubishi Electric Research Laboratories, Inc.

Mitsubishi Electric Corporation

University of California

United States of America as Represented by the Administrator of Nasa

The State University of New York

Jonathan Klamkin

Satoshi Nishikawa

Keisuke Kojima

Bowen Song

Shusaku Hayashi

Yosuke Suzuki

Yingheng Tang

Douglas Duane Coolbaugh

John E Bowers

Douglas La Tulipe

Justin Norman

Mark A Stephen

Gerald L Leake, Jr

Daehwan Jung

William Charles

Songtao Liu

Victoria Rosborough

Joseph Fridlander

Bei Shi

Simone Tommaso Suran Brunelli

Simone Suran Brunelli

A sensor device and method of fabrication therefor. The method includes providing a partially completed semiconductor substrate having the following stacked materials: a silicon substrate, a buffer material, an n-type semiconductor material, an unintentionally doped (UID) optically absorptive material, a UID optically transparent semiconductor material, and a native insulating material. The substrate is sealed in a predetermined environment within a first carrier device, and then transferred from a first geographic location to a second geographic location. The substrate is then transferred to a second carrier device and cleaned. A dielectric material is formed overlying the substrate and patterned to form a p-type contact region and an n-type contact region. A p-type semiconductor region is formed via the p-type contact region, a p-type metal contact is formed overlying the p-type contact region, and an n-type metal contact is formed overlying the n-type contact region to form a common n-type electrode.

Sensor array device and method therefor

A method and device for a photodetector circuit using a near infrared (NIR) compliant substrate. The substrate includes a plurality of v-grooves formed within a front region and at least a first GaAs buffer region, a defect filter layer (DFL), and a second GaAs buffer region formed overlying. The device can also include an overlying wavelength configuring material having a graded region with a plurality of material regions configured in order of concentration with respect to at least a first element concentration, which can be configured for a selected wavelength. Then, photodetector device materials can be formed overlying the wavelength configuring material and can include at least an n-type contact region, an absorber region, a p-type spacer region, and a p-type contact region. These device materials can be configured in an array of photomultiplier (PM) devices, single photon avalanche detector (SPAD) devices, or the like.

Method and device for photodetector circuit with near infrared compliant substrate

A method and device for a sensor using a graded wavelength configuring material. The wavelength configuring material can be configured for a selected wavelength using plurality of material regions of varying elemental concentrations in a continuous or step-wise pattern. The material compositions can include InP, InGaAs, GaAs, GaP, InGaAsP, InAs, InAlAs, InAlGaAs, InGaP, and the like. Further, the interface regions between adjacent material regions can be free from smearing of compositions. These material regions can also form a strained graded region overlying a buffer material and a silicon substrate. An array of photodetector materials can be formed overlying the wavelength configuring material. These materials can include an n-type material, an absorption material, a band transition material, and a p-type material, among others. The resulting device exhibits high performance at the selected wavelength and is characterized by low dislocation density.

Method and device for photosensor using graded wavelength configuring materials

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for vehicle applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for vehicle apparatuses such as automobiles, boats, airplanes, and drones, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

LIDAR sensor using compound semiconductor materials for vehicle apparatus

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

Photodetector module comprising emitter and receiver

LIDAR sensor for vehicle apparatus

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for mobile applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

LIDAR sensor using compound semiconductor materials for mobile device

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

Photodetector circuit comprising a compound semiconductor device on silicon

A non-etched gap is introduced along the length of an integrated Bragg grating with etched grooves such that the coupling coefficient, K, of the grating is reduced by the non-etched gap. In this way, multiple grating K values may be defined within a photonic integrated circuit using a single lithography and etch step. Additionally, the non-etched gap width may be varied along the length of a single grating to implement a chirped grating.

Method for integration of variable Bragg grating coupling coefficients

A grating coupler having first and second ends for coupling a light beam to a waveguide of a chip includes a substrate configured to receive the light beam from the first end and transmit the light beam through the second end, the substrate having a first refractive index n1, a grating structure having curved grating lines arranged on the substrate, the grating structure having a second refractive index n1, wherein the curved grating lines have line width w and height d and are arranged by a pitch &#x39b;, wherein the second refractive index n2 is less than first refractive index n1, and a cladding layer configured to cover the grating structure, wherein the cladding layer has a third refractive index n3. The curves of the grating lines are constructed such that the emitting beam is shaped for efficient coupling to another optical component. The curves can also be tilted to reduce coupling back into the waveguide.

Grating coupler and integrated grating coupler system

An integrated grating coupler system includes a first chip having a first substrate, a first grating structure formed by first grating curves arranged on the first substrate and a cladding layer formed to cover the first grating structure, wherein the first chip include a first waveguide configured to receive a light beam from a first end via the first waveguide and transmit the light beam through a second end, a second chip having a second substrate and a second grating structure formed by second grating curves arranged on the second substrate, wherein the second chip is configured to receive the light beam from the second end of the first chip and transmit the light beam from an end of the second chip, and a common block configured to mount the first chip and second chip via a first submount and a second submount respectively, wherein the first and second submounts are arranged such that the light beam from the second end of the first chip is received at a top of the second chip.

Integrated grating coupler system

There is set forth herein a method including a substrate; a dielectric stack disposed on the substrate; one or more photonics device integrated in the dielectric stack; and a laser light source having a laser stack including a plurality of structures arranged in a stack, wherein structures of the plurality of structures are integrated in the dielectric stack, wherein the laser stack includes an active region configured to emit light in response to the application of electrical energy to the laser stack.

Growing community of inventors

Santa Barbara, CA, United States of America

Jonathan Klamkin