Psemi Corporation

Qualcomm Incorporated

Jonathan James Klaren

Tero Tapio Ranta

Keith Bargroff

Robert Mark Englekirk

David Kovac

Eric S Shapiro

Christopher C Murphy

Charles James Persico

Paul L Chan

Dan William Nobbe

Emre Ayranci

Poojan Wagh

Gary John Ballantyne

Parvez Daruwalla

Yucheng Tong

Scott Walter

Jianjun Zhou

Neil Calanca

Walter Scott Charles

Somphou Sithideth

Walter Charles Scott

Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.

Cascode amplifier bias circuits

Methods and devices used in mobile receiver front end to support multiple paths and multiple frequency bands are described. The presented devices and methods provide benefits of scalability, frequency band agility, as well as size reduction by using one low noise amplifier per simultaneous outputs. Based on the disclosed teachings, variable gain amplification of multiband signals is also presented.

Compact architecture for multipath low noise amplifier

A biasing circuit with high current drive capability for fast settling of a biasing voltage to a stacked cascode amplifier is presented. According to a first aspect, the biasing circuit uses transistors matched with transistors of the cascode amplifier to generate a boost current during a transition phase that changes the biasing voltage by charging or discharging a capacitor. The boost current is activated during the transition phase and deactivated when a steady-state condition is reached. According to a second aspect, the biasing circuit uses an operational amplifier in a feedback loop that forces a source node of a cascode transistor of a reference circuit, that is a scaled down replica version of the cascode amplifier, to be at a reference voltage. The high gain and high current capability of the operational amplifier, provided by isolating a high frequency signal processed by the cascode amplifier from the reference circuit, allow for a quick settling of the biasing voltage.

Transient stabilized cascode biasing

Circuits and methods for improving IC yield during automated test equipment (ATE) calibration of circuit designs which require Icalibration and use a closed feedback bias circuit, such as amplifier circuits. The circuit designs include bias branch/active circuit architectures where the active circuit includes one or more active devices. An example first embodiment uses an on-chip calibration switch between the on-chip grounds of a bias network and an active circuit comprising an amplifier. During calibration of the active circuit by the ATE, the calibration switch is closed, and after completion of calibration, the calibration switch is opened. An example second embodiment utilizes an active on-chip feedback loop calibration circuit to equalize voltages between the on-chip grounds of a bias network and an active circuit comprising an amplifier during calibration of the active circuit. Both embodiments mitigate or overcome miscalibration of active circuit current settings resulting from ATE test probe resistance.

Integrated circuit yield improvement

A variable level power clamping circuit that may be used for the bypass path of an RF receiver having a low-noise amplifier (LNA). Impedance transform circuitry is used to transform the impedance of a signal path to a higher or lower impedance at a clamping circuit, causing the voltage at the clamping circuit to be, respectively, higher (thus clamping at a lower power level) or lower (thus clamping at a higher power level), and then transform the impedance after the clamping circuit to another value, such as to the impedance of the signal path. In a variant embodiment, the clamping circuit and an impedance matching element coupled to an LNA amplification path are re-purposed by selectively connecting those circuit elements to the LNA bypass path through a suitable impedance transform element when in a bypass mode.

Variable level power clamping circuit

Radio frequency (RF) receiver design is a challenging task, involving conflicting requirements such as tight link budget, small footprint, low insertion loss, tuning and out-of-band rejections. Methods and devices are described to allow RF receiver design meeting stringent requirements at higher frequencies while preserving a small footprint and without affecting the overall performance.

Integrated BPF and LNA input match

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San Diego, CA, United States of America

Jonathan James Klaren