Taiwan Semiconductor Manufacturing Comp. Ltd.

Jonathan Hung

Shine Chung

A circuit and method for a sense amplifier for sensing the charge stored when a select signal couples a memory cell to the sense amplifier. A pull up voltage and a pull down voltage are instantaneously supplied to the sense amplifier to sense the small signal differential input on the complementary bit lines and to simultaneously restore the value stored in the memory cell. A differential output signal generator circuit is provided to instantaneously supply the pull up and pull down voltages. In another preferred embodiment the signal generator provides the pull up and pull down voltages at a first level and subsequently increases the pull up voltage to a voltage greater than the positive supply voltage and decreases the pull down voltage. A method of sensing is disclosed wherein the sense and restore actions are performed instantaneously to provide memory cell sensing with greater tolerance of device mismatches.

Circuit and method for a sense amplifier with instantaneous pull up/pull down sensing

A temperature-dependent oscillator includes a first current source, wherein a first current provided by the first current source has a positive temperature coefficient, a second current source serially connected to the first current source, wherein a second current provided by the second current source has a negative temperature coefficient, and a capacitor serially connected to the first current source and parallel connected to the second current source.

Temperature tracking oscillator circuit

A temperature-sensitive current source includes a first MOS transistor having a source coupled to a first voltage; a second MOS transistor having a source coupled to the first voltage, and a gate coupled to a gate of the first MOS transistor, such that a current output at a drain of the second MOS transistor mirrors a current passing across the first MOS transistor; and a resistor coupled between the source and a drain of the first MOS transistor in parallel, such that the current passing across the first MOS transistor is substantially larger than a current passing through the resistor, wherein the first and second MOS transistors operate in a saturation mode, such that the output current at the drain of the second MOS transistor is responsive to a change of temperature.

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Hsin-Chu, Taiwan

Jonathan Hung