International Business Machines Corporation

The Carborundum Company

Other

Crystalline Materials Corporation

Interplex Qlp, Inc.

Oasis Materials Corporation

Cmc Wireless Components, Inc.

Carborundum Corporation

Jonathan H Harris

Robert A Youngman

Subhash Laxman Shinde

Lester W Herron

Benjamin V Fasano

Jon Alfred Casey

Robert Hannon

Niranjan Mohanlal Patel

Rao Venkateswara Vallabhaneni

David B Goland

Gregory M Johnson

Andrew Michael Reitter

Carla Natalia Cordero

Takeshi Takamori

Michael A Zimmerman

Frank J Polese

Richard A Shelleman

Gabriel Carrasco

Stephen P Nootens

Sorin Dinescu

William L Bradbury

Casey C Clausen

Thomas S Nemecek

Rudolph C Enck

Robert J Tesch

Irvin Huseby

Erich K Rubel

A monolithic, substantially hermetic joining or bonding of two or more aluminum nitride ('AlN') ceramic components is made by promoting transient liquid phase sintering near the contact areas between the components. In a first approach, AlN particles are combined with a rare earth oxide sintering additive such as yttrium oxide (YO) in a joining paste can be applied between the joining surfaces of fired ceramic preformed components prior to final firing to weld the components together. In a second approach, the additive is added to green mixture, and the components having different shrinkage aspect ratios are mated and cofired in an atmosphere containing a partial pressure of the additive. The additive encourages wetting and diffusion of the liquid phases present on the surfaces of ceramic interface particles in the contact areas during final firing.

Transient liquid phase, pressureless joining of aluminum nitride components

A microcircuit package having a ductile layer between a copper flange and die attach. The ductile layer absorbs the stress between the flange and semiconductor device mounted on the flange, and can substantially reduce the stress applied to the semiconductor device. In addition, the package provides the combination of copper flange and polymeric dielectric with a TCE close to copper, which results in a low stress structure of improved reliability and conductivity.

Microcircuit package having ductile layer

The invention is a two-piece surgical cord holder with the first unit thereof being in the shape of nearly a right angle with the other unit thereof thereof polysided with three horizontally inclined sides, three vertically inclined sides, a plurality of threaded through holes in the first of the vertically inclined sides for receipt through one of them and a through hole in either leg of the first unit of a first turning screw component serving to hold the fully assembled cord holder fast to the lateral side of a tabletop portion of a surgical operating table and a threaded hole in the first of the three horizontally inclined sides for receipt of a second turning screw component serving to hold the fully assembled cord holder fast to the bottom side of the tabletop portion of the table.

Two-piece surgical cord holder

A substrate for a microelectronic package comprising a substrate that has grooves on a surface for bonding. A method for preparing a substrate for bonding comprising forming a grooved surface in the substrate for accepting a die for bonding, wherein the grooves are of sufficient size to provide a substantially uniform die bond, but no so large as to nullify the thermal path to the underlying substrate. A method for forming a bond between a substrate and a die comprising: providing a substrate and a die, wherein the substrate has grooves formed in a surface area for accepting the die for bonding and having a metallization thereon sufficient to form a eutectic bond with the die having a gold metallization thereon; and forming a eutectic bond between the substrate and the die comprising heating the substrate, contacting the metallized grooved surface of the substrate to the gold metallized surface of the die, scrubbing the die onto the substrate by moving the die back and forth while maintaining contact, and cooling the substrate and die. A microelectronic structure comprising a substrate and a die, wherein the substrate has grooves on a surface adapted for bonding with the die, and wherein a bond is formed between the substrate and the die.

Die attachment utilizing grooved surfaces

A controlled dielectric loss, sintered aluminum nitride body having a density of greater than about 95% theoretical, a thermal conductivity of greater than about 100 W/m-K, and a dissipation factor measured at room temperature at about 1 KHz selected from:

Process for making a low electrical resistivity, high purity aluminum

Disclosed is a method of forming an aluminum nitride article. The method includes the steps of adding platinum to a composition including a binder, aluminum nitride particles and a sintering aid; forming the composition into an article; placing the article in a substantially non-carbonaceous container; and sintering the article in a reducing atmosphere to cause removal of the binder and densification of the aluminum nitride article, wherein the platinum catalyzes the removal of the binder.

Method of forming an aluminum nitride article utilizing a platinum

An aluminum nitride ceramic having enhanced properties suitable for electronic packaging applications can be prepared from a synergistic aluminum nitride powder/sintering aid mixture, in which the sintering aid is formulated to provide a resultant desirable second phase within the sintered body. The aluminum nitride powder/sintering aid mixture can be formed into green sheet-metal laminates and sintered at low temperature to yield high density, high electrical resistivity, and high thermal conductivity metal ceramic sintered bodies with low camber.

Low temperature sintered, resistive aluminum nitride ceramics

Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

Aluminum nitride body having graded metallurgy

An aluminum nitride ceramic having desired properties suitable for electronic packaging applications can be prepared from a novel aluminum nitride powder/sintering aid mixture. The sintering aid comprises a glassy component formed from alumina, calcia and boria, and a non-vitreous component comprising an element or compound of a metal of Group IIa, IIIa, or the lanthanides, preferably crystalline oxides, reactibis with the crystallized glass component and the alumina from the Al N grains. Alternatively, the sintering aid comprises a multi-component glass composition capable of forming the above components upon melting and thereafter crystallizing upon reaction.

Low temperature sintering route for aluminum nitride ceramics

An aluminum nitride ceramic having desired properties suitable for electronic packaging applications can be prepared from a novel aluminum nitride powder/sintering aid mixture. The sintering aid comprises a glassy component formed from alumina, calcia and boria, and a non-vitreous component comprising an element or compound of a metal of Group IIa, IIIa, or the lanthanides, preferably crystalline oxides, reactible with the crystallized glass component and the alumina from the AlN grains. Alternatively, the sintering aid comprises a multi-component glass composition capable of forming the above components upon melting and thereafter crystallizing upon reaction.

Growing community of inventors

Scottsdale, AZ, United States of America

Jonathan H Harris