Motorola Corporation

Jonathan H Hammond

Daniel N Koury, Jr

Young Sir Chung

Daniel J Koch

Andrew C McNeil

Ronald J Gutteridge

Richard J August

Jonathan F Gorrell

A sensor has a support substrate (,), an electrode (,) movable relative to a surface (,) of the support substrate (,) and comprised of a first material, a structure (,) over a portion of the electrode (,) to limit mobility of the electrode (,) and comprised of a second material different from the first material, and bonding pads (,) outside a perimeter of the electrode (,) and comprised of the second material.

Method of manufacturing a sensor

An electronic component includes a support substrate (101), a fixed electrode (113) overlying the support substrate (101), a movable electrode (123, 423) overlying the support substrate and the first electrode (113) wherein the first and second electrodes (113, 123, and 423) form a capacitor with a sensing area, an anchor (122, 422) coupled to the support substrate (101), and beams (125, 425) coupling different attachment points (129) of the second electrode (123, 423) to the anchor (122, 422) wherein the different attachment points (129) form a simply connected polygon and wherein a portion of the sensing area is located within the simply connected polygon.

Electronic component for measuring acceleration

A sensor (11) has a movable plate (16) that moves in response to an external acceleration. The movable plate (16) has a finger (17) that is capacitively coupled to fingers (13,14) that are attached to a substrate (12). A travel stop (19) is used to stop the movable plate (16) before the finger (17) on the movable plate (16) collides into the fingers (13,14) on the substrate (12).

Sensor devices having a movable structure

A field effect transistor (10) for chemical sensing by measuring a change in a surface potential of a gate electrode (48) due to exposure to a fluid has a semiconductor substrate (12) with a trench (18,20). The trench has a first sidewall (30) and a second sidewall (32) disposed opposite the first sidewall to provide a fluid gap (50) for the fluid to be sensed. The gate electrode is disposed overlying the first sidewall of the trench, and a source region (54) and a drain region (56) are disposed in the second sidewall of the trench. A channel region (52) is disposed between the source and drain regions, and the gate electrode is disposed opposite the first channel region across the fluid gap. A heater (26) for regulating the temperature of the gate electrode is disposed in the first sidewall of the trench.

Chemical sensing trench field effect transistor and method for same

A field effect transistor (10) for chemical sensing by measuring a change in a surface potential of a gate electrode (48) due to exposure to a fluid has a semiconductor substrate (12) with a trench (18, 20). The trench has a first sidewall (30) and a second sidewall (32) disposed opposite the first sidewall to provide a fluid gap (50) for the fluid to be sensed. The gate electrode is disposed overlying the first sidewall of the trench, and a source region (54) and a drain region (56) are disposed in the second sidewall of the trench. A channel region (52) is disposed between the source and drain regions, and the gate electrode is disposed opposite the first channel region across the fluid gap. A heater (26) for regulating the temperature of the gate electrode is disposed in the first sidewall of the trench.

Growing community of inventors

Scottsdale, AZ, United States of America

Jonathan H Hammond