Drexel University

University of Pennsylvania

University of California

Bar-ilan University

Jonathan Eli Spanier

Andrew Marshall Rappe

Zongquan Gu

Stephen S Nonnenmann

Oren David Leaffer

Peter K Davies

Ilya Grinberg

Yury Gogotsi

Robert C Devlin

Babak Anasori

Baris Taskin

Don Vincent West

Mitra Lenore Taheri

Bahram Nabet

Alessia Polemi

James Rondinelli

Liyan Wu

Guannan Chen

Andrei R Akbasheu

Eric M Gallo

Dominic Imbrenda

Matthias Falmbigl

Mohammad Anwarul Islam

Andrew Lewis Bennett-Jackson

Vladimir M Fridkin

Atanu Samanta

Haim Barak

Robert A York

Steven May

Cedric J G Meyers

An article comprising a ferroelectric material in its ferroelectric phase, wherein the article is configured to enable low-loss propagation of signals with ultra-low dielectric loss at one or more select frequencies.

Solid state tunable ionic oscillator dielectric materials and resonant devices

The present disclosure is directed to using MXene compositions as templates for the deposition of oriented perovskite films, and compositions derived from such methods. Certain specific embodiments include methods preparing an oriented perovskite, perovskite-type, or perovskite-like film, the methods comprising: (a) depositing at least one perovskite, perovskite-type, or perovskite-like composition or precursor composition using chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD) onto a film or layer of a MXene composition supported on a substrate to form a layered composition or precursor composition; and either (b) (1) heat treating or annealing the layered precursor composition to form a layered perovskite-type structure comprising at least one oriented perovskite, perovskite-type, or perovskite-like composition; or (2) annealing the layered composition; or (3) both (1) and (2).

MXene layers as substrates for growth of highly oriented perovskite thin films

The present invention is directed to photovoltaic and photogalvanic devices and methods of generating electrical energy and power or detecting light therefrom, based on a novel nano-enhanced bulk photovoltaic effect using non-centrosymmetric crystals, including ferroelectric and piezoelectric materials, where the non-centrosymmetry is the equilibrium state or it is static or dynamically induced. In certain embodiments, the device comprises a layer of non-centrosymmetric crystalline materials, and a plurality of electrodes disposed in an array upon or penetrating into at least one surface of the crystalline material, the electrodes being optimally spaced to capture the ballistic carriers generated upon irradiation of the crystalline material.

Photovoltaic cells comprising a layer of crystalline non-centrosymmetric light-absorbing material and a plurality of electrodes to collect ballistic carriers

A method of growing a FE material thin film using physical vapor deposition by pulsed laser deposition or RF sputtering is disclosed. The method involves creating a target to be used for the pulsed laser deposition in order to create a KBNNO thin film. The resultant KBNNO thin film is able to be used in photovoltaic cells.

Method for making ferroelectric material thin films

Coupling of switchable ferroelectric polarization with the carrier transport in an adjacent semiconductor enables a robust, non-volatile manipulation of the conductance in a host of low-dimensional systems, including the two-dimensional electron liquid that forms at the LaAlO&#x2014;SrTiOinterface. However, the strength of the gate-channel coupling is relatively weak, limited in part by the electrostatic potential difference across a ferroelectric gate. Compositionally grading of PbZrTiOferroelectric gates enables a more than twenty-five-fold increase in the LAO/STO channel conductance on/off ratios. Incorporation of polarization gradients in ferroelectric gates can enable significantly enhanced performance of ferroelectric non-volatile memories.

Engineered ferroelectric gate devices

Disclosed herein are nanoscale devices comprising one or more ferroelectric nanoshells characterized as having an extreme curvature in at least one spatial dimension. Also disclosed are ferroelectric field effect transistors and metal ferroelectric metal capacitors comprising one or more ferroelectric nanoshells. Methods for controlling spontaneous ferroelectric polarization in nanoshell devices are also disclosed.

Ferroelectric nanoshell devices

Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.

Semiconductor ferroelectric compositions and their use in photovoltaic devices

A vertical charge ordered transistor is disclosed. A thin charge ordered layer is employed as a tunnel barrier between two electrodes. A gate-induced accumulation of charge destabilizes the charge ordered state around the circumference of the device, opening up a parallel ohmic conduction channel, which leads to an exponential increase in source-drain current. VCOT devices have the potential to exhibit very large on/off ratios, low off-state currents, and sub-threshold slopes below 60 mV/dec.

Charge ordered vertical transistors

Provided are multimaterial devices, such as coaxial nanowires, that effect hot photoexcited electron transfer across the interface of the materials. Modulation of the transfer rates, manifested as a large tunability of the voltage onset of negative differential resistance and of voltage-current phase, may be effected by modulating electrostatic gating, incident photon energy, and the incident photon intensity. Dynamic manipulation of this transfer rate permits the introduction and control of an adjustable phase delay within a device element.

Tunable hot-electron transfer within a nanostructure

Nanoscaled, tunable detector devices for ultrasensitive detection of terahertz (THz) radiation based on the fabrication of one-dimensional (1D) plasma devices having clouds of strongly correlated and spatially confined electronic charge carriers are disclosed. These one-dimensional collective excitations ('plasmons') are realized using coaxial semiconducting core-shell nanowires or by electrostatically confining a two dimensional charge to one dimension. By exploiting the properties of plasmons confined to reduced dimensions and under a selected device configuration, conventional limitations on carrier drift and transit times that dictate the speed and sensitivity of transistors can be circumvented, and detector sensitivity can be improved. 1D devices with sub-picosecond response times will be important for a range of applications in diverse areas such as remote sensing and imaging, molecular spectroscopy, biotechnology, and in a range of the spectrum that has been difficult to detect. In addition to electromagnetic radiation these devices can be used as detectors of charged particle perturbations.

Nanowire based plasmonics

Growing community of inventors

Bala Cynwyd, PA, United States of America

Jonathan Eli Spanier