Applied Materials, Inc.

Lam Research Corporation

Novellus Systems Incorporated

Mattson Technology, Inc

Miradia Inc.

Gehode Corporation

Jonathan David Mohn

Shawn M Hamilton

Patrick A Van Cleemput

Harald Te Nijenhuis

Kevin Madrigal

Nicholas Muga Ndiege

Michael S Barnes

Daniel J Devine

Martin L Zucker

Howard Woo

Patrick Leahey

David Fang Wei Chen

Jeffrey E Lorelli

Brian K McGinley

Wenbo Liang

Kenneth S Collins

John Patrick Holland

Ananda H Kumar

Shamouil Shamouilian

Gerald Z Yin

Stephen E Savas

Arnold Kholodenko

Arthur H Sato

Dennis Stanley Grimard

Rene George

Xue-Yu Qian

Kien Nai Chuc

Vladimir Nagorny

Michael G Chafin

Ramkishan Rao Lingampalli

Brian K Hatcher

Ryan M Pakulski

Vincent Lee

Dixit V Desai

Steve S Y Mak

Zhi-wen Sun

Arthur Y Chen

Charles Crapuchettes

Waiching Chow

Yuya Matsuda

John J Helmsen

Provided are methods and apparatus for ultraviolet (UV) assisted capillary condensation to form dielectric materials. In some embodiments, a UV driven reaction facilitates photo-polymerization of a liquid phase flowable material. Applications include high quality gap fill in high aspect ratio structures and pore sealing of a porous solid dielectric film. According to various embodiments, single station and multi-station chambers configured for capillary condensation and UV exposure are provided.

Apparatus for UV flowable dielectric

Provided are methods and apparatus for ultraviolet (UV) assisted capillary condensation to form dielectric materials. In some embodiments, a UV driven reaction facilitates photo-polymerization of a liquid phase flowable material. Applications include high quality gap fill in high aspect ratio structures and por sealing of a porous solid dielectric film. According to various embodiments, single station and multi-station chambers configured for capillary condensation and UV exposure are provided.

Low k dielectric deposition via UV driven photopolymerization

Apparatuses and techniques for providing for variable radial flow conductance within a semiconductor processing showerhead are provided. In some cases, the radial flow conductance may be varied dynamically during use. In some cases, the radial flow conductance may be fixed but may vary as a function of radial distance from the showerhead centerline. Both single plenum and dual plenum showerheads are discussed.

Dual-plenum showerhead with interleaved plenum sub-volumes

Electronic device fabrication processes, apparatuses and systems for flowable gap fill or flowable deposition techniques are described. In some implementations, a semiconductor fabrication chamber is described which is configured to maintain a semiconductor wafer at a temperature near 0&#xb0; C. while maintaining most other components within the fabrication chamber at temperatures on the order of 5-10&#xb0; C. or higher than the wafer temperature.

System and apparatus for flowable deposition in semiconductor fabrication

An apparatus and method are described for processing workpieces in a treatment process. A multi-wafer chamber defines a chamber interior including at least two processing stations within the chamber interior such that the processing stations share the chamber interior. Each processing station includes a plasma source and a workpiece pedestal for exposing one of the workpieces to the treatment process using a respective plasma source. The chamber includes an arrangement of one or more electrically conductive surfaces that are asymmetrically disposed about the workpiece at each processing station in a way which produces a given level of uniformity of the treatment process on a major surface of each workpiece. A shield arrangement provides an enhanced uniformity of exposure of the workpiece to the respective one of the plasma sources that is greater than the given level of uniformity that would be provided in an absence of the shield arrangement.

Advanced multi-workpiece processing chamber

Variable showerhead flow by varying internal baffle conductance

A workpiece support is disclosed defining a workpiece-receiving surface. The workpiece support includes a plurality of fluid zones. A fluid, such as a gas, is fed to the fluid zones for contact with a workpiece on the workpiece support. The fluid can have selected thermoconductivity characteristics for controlling the temperature of the workpiece at particular locations. In accordance with the present disclosure, at least certain of the fluid zones are at different azimuthal positions. In this manner, the temperature of the workpiece can be adjusted not only in a radial direction but also in an angular direction.

Workpiece support with fluid zones for temperature control

Hydrogen cleave silicon process for light modulating mirror structure using single crystal silicon as the base cross-member. Existing processes use two critical alignment steps that can contribute to higher actuation voltages and result in lower manufacturing yields. The hydrogen cleave process simplifies the manufacturing process to one step: transferring a thin film of single crystal silicon to the CMOS substrate, resulting in minimal alignment error and providing large bonding area.

Mirror structure with single crystal silicon cross-member

A spatial light modulator (SLM) is disclosed that increases speed and efficiency of an SLM through the use of a perforated hinge. The hinge may take many forms, but generally includes an elongated body having holes therein along its longitudinal direction. One or more electrodes are charged with a predetermined voltage in order rotate a reflecting surface towards the electrodes through electrostatic attraction. The perforations within the hinge results in the hinge being made from less material so that it is less sensitive to hinge thickness variations that can occur during the manufacturing process. Consequently, the perforated hinge allows for more stable, uniform mirror rotation.

Spatial light modulator with perforated hinge

A multi-purpose chamber that can be configured for a variety of processes, including deposition processes and etch processes, for example, by installing one or more removable chamber liners. The multi-purpose chamber provides uniform plasma confinement around a substrate disposed in the chamber for various processing conditions. The multi-purpose chamber also provides efficient and uniform exhaust of processing gas from the chamber.

Multi-purpose processing chamber with removable chamber liner

A method and apparatus for use in conjunction with a plasma reaction chamber provide both throttling functionality and independent vacuum isolation for a turbomolecular pump. A throttle valve provides for precise reaction chamber pressure regulation, and a gate valve prevents extended exposure of the turbomolecular pump to atmospheric conditions during cleaning or other maintenance operations. The throttle valve and the gate valve may be actuated independently.

Compact independent pressure control and vacuum isolation for a turbomolecular pumped plasma reaction chamber

The present invention is embodied in a plasma reactor with an inductive coil antenna facing the reactor chamber in which the windings of the coil antenna have a flattened cross-sectional shape, the flat portion of the winding facing toward the plasma within the reactor. Preferably, the coil antenna is located outside the reactor and faces a ceiling or wall of the reactor chamber. The coil antenna may be a single helical coil winding or multiple concentric spiral windings.

Plasma reactor inductive coil antenna with flat surface facing the plasma

An apparatus and process for treating and conditioning an etching chamber , and cleaning a thin, non-homogeneous, etch residue on the walls and components of the etching chamber . In the etching step, a substrate is etched in the etching chamber to deposit a thin etch residue layer on the surfaces of the walls and components in the chamber. In the cleaning step, cleaning gas is introduced into a remote chamber adjacent to the etching chamber , and microwave or RF energy is applied inside the remote chamber to form an activated cleaning gas. A short burst of activated cleaning gas at a high flow rate is introduced into the etching chamber to clean the etch residue on the walls and components of the etching chamber. The method is particularly useful for cleaning etch residue that is chemically adhered to ceramic surfaces in the chamber, for example surfaces comprising aluminum nitride, boron carbide, boron nitride, diamond, silicon oxide, silicon carbide, silicon nitride, titanium oxide, titanium carbide, yttrium oxide, zirconium oxide, or mixtures thereof.

Treatment of etching chambers using activated cleaning gas

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Saratoga, CA, United States of America

Jonathan David Mohn