Csem Centre Suisse D'electronique Et De Microtechnique Sa&#x2014;recherche Et D&#xe9;veloppement

Csem Centre Suisse D'electronique Et De Microtechnique Sa

Jonathan Champliaud

Christophe Ballif

Matthieu Despeisse

Antonin Faes

Nicolas Badel

Bertrand Paviet-salomon

Gaëlle Andreatta

Method of manufacturing a single-side-contacted photovoltaic device (), comprising the steps of: a) providing a photovoltaically-active substrate () defining a plurality of alternating hole collecting zones () and electron collecting zones () arranged in parallel strips; b) depositing a conductive layer () across said zones; c) depositing at least one conductive track () extending along at least part of each of said zones (); d) selectively forming a dielectric layer () on each of said zones (), so as to leave an exposed area free of dielectric at an interface between adjacent zones (); e) etching said conductive layer () in said exposed areas; f) applying a plurality of interconnecting conductors () so as to electrically interconnect at least a portion of said hole collecting zones () with each other, and to electrically interconnect at least a portion of said electron collecting zones () with each other.

Method of manufacturing a photovoltaic device

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Savagnier, Switzerland

Jonathan Champliaud