Micron Technology Incorporated

Jonathan C Morgan

Paul A Morgan

Kevin J Torek

Li Li

Richard C Hawthorne

An apparatus and method for delivering ozone to a workpiece. In one embodiment, fluid is sprayed onto a workpiece placed in an ozone-rich environment. Alternatively, ozone is mixed with the fluid prior to spraying the fluid onto the workpiece. When spraying the fluid, the invention pulses the fluid at desired rates to create a substantially uniform layer of ozone-rich fluid on the workpiece. In another embodiment, the workpiece is also slowly rotated during at least a portion of the time the layer of ozone-rich fluid is applied to the workpiece.

Delivery of dissolved ozone

The present invention generally provides a physical system and method for mixing a gas in a solvent to produce a solution used in the processing of a semiconductor work object. To dissolve a desired gas into a desired solvent, the solvent and gas are introduced into a pressurizable mixing module. The mixing module is selectably in communication with a process vessel. A pressure control mechanism, such as a valve, is located downstream of the mixing module to regulate the pressure and flow of solution or fluid in and leaving the mixing module to the process vessel. Preferably, the pressure control mechanism is located downstream and in communication with the process vessel. By adjusting the level of restriction of the pressure control mechanism the pressure of the gas in the mixing vessel above the solvent may be positively or negatively affected to vary the concentration of gas in solution based on Henry's Law. The system and method of this invention can be used to produce solutions of water and ozone having over 5 ppm ozone. It can also be used to produce water-ozone solutions having at least 16 ppm ozone at mixing temperatures over 15.degree. C.

System and method for mixing a gas into a solvent used in semiconductor

Disclosed is a method for the removal of a layer of photoresist material from a surface of a film located on an in-process integrated circuit wafer subsequent to etching the film through the photoresist material layer. The method disclosed herein comprises first, applying a layer of the photoresist material layer over the film, then patterning the photoresist material, etching the film, and finally, removing the photoresist material. The etch is preferably a wet etch conducted in a closed reaction chamber. The photoresist material removal can be conducted within the same closed reaction chamber as that in which the etch was conducted. Photoresist material removal is achieved by exposing the photoresist material to heated solvent vapors. One particularly advantageous vapor solvent comprises isopropyl alcohol. Subsequent to the photoresist material removal, the film is preferably subjected to cleaning, rinsing, and drying methods, all of which can be conducted within the same closed reaction chamber.

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Nampa, ID, United States of America

Jonathan C Morgan