Teledyne Scientific and Imaging, LLC

Rockwell Scientific Licensing LLC

Innovative Technology Licensing LLC

Other

The Boeing Company

Jonathan Bruce Hacker

Moonil Kim

John A Higgins

Christopher E Hillman

Jeffrey DeNatale

Robert Mihailovich

Yin Tat Ma

Robert L Borwick, Iii

Karim S Boutros

J Aiden Higgins

Paul H Kobrin

Mark Field

Jeffrey F De Natale

Chris Hillman

William R Norvell

A cascode gain stage apparatus includes a common-emitter connected transistor having a first base metal contact, first emitter metal contact, a first collector metal contact and a u-shaped first collector interface metal; and a common-base connected transistor having a second emitter metal contact, a second base metal contact, and a second collector metal contact, the second emitter metal contact in communication with the first collector metal contact through a transistor interconnect metallic strap, the second emitter metal contact disposed between the first collector metal contact and the second base metal contact. With this configuration, the first collector metal contact and second emitter metal contact are connected by the transistor interconnect metallic strap without high-aspect ratio traces to reduce crossover coupling.

HBT cascode cell

A dynamic and end-user configurable controlled impedance interconnect line includes a plurality of conductive pixels, a plurality of thin-film transition material interconnects to electrically connect adjacent conductive pixels in the plurality of conductive pixels, and a plurality of addressable pixel interconnect actuators to selectively heat a respective plurality of the thin-film transition material interconnects. The plurality of addressable pixel interconnect actuators is operable to selectively heat a respective plurality of the thin-film transition material interconnects to form an interconnect line.

System of dynamic and end-user configurable electrical interconnects

A waveguide component encapsulation device may include a housing having first and second surfaces, the housing defining a channel extending through the first and second surfaces, a micromachined waveguide component configured to be positioned in the channel, the waveguide component having first and second ends extending outside the channel and beyond the first and second surfaces of the housing by a finite length, and a pair of spacing members configured to align and stabilize the waveguide component within the channel.

Ruggedized waveguide encapsulation fixture for receiving a compressed waveguide component

A vanadium dioxide front-end advanced shutter device. The electronic shutter device is designed to protect receiver front-ends and other sensitive circuits from HPM pulse events such as HPM weapons, directed energy weapons, or EMPs. The shutter incorporates a transition material such as thin-film vanadium oxide (VOX) materials that exhibit a dramatic change in resistivity as their temperature is varied over a narrow range near a known critical temperature. A high-energy pulse causes ohmic heating in the shutter device, resulting in a state change in the VOX material when the critical temperature is exceeded. During the state change the VOX material transitions from an insulating state (high resistance) to a reflective state (low resistance). In the insulating state, the shutter device transmits the majority of the signal. In the reflective state, most of the signal is reflected and prevented from passing into electronics on the output side of the shutter device.

Vanadium-dioxide front-end advanced shutter technology

Devices and systems for using a Gallium Nitride-based (GaN-based) transistor for selectively switching signals are provided. A first transmission line is configured to connect a common connection and a first connection. A first Gallium-Nitride-based (GaN-based) transistor has a first terminal coupled to the first transmission line at a first point, a second terminal coupled to a relative ground, and a third terminal configured to be coupled to a first control connection. A second GaN-based transistor has a first terminal coupled to the first transmission line at a second point, a second terminal configured to be coupled to the relative ground, and a third terminal configured to be coupled to the first control connection.

Gallium nitride switch methodology

High frequency power amplification modules comprise a dielectric substrate supporting a stepped impedance transition coupled to the input of a power amplifier and a symmetrically disposed stepped impedance transition connected to the output of the power amplifier. The power amplification modules are oriented in an electromagnetic energy field so that input electromagnetic energy is coupled to the input of the power amplifier by the input side stepped impedance transition, amplified by the amplifier, and emitted from the module by the output side stepped impedance transition. A plurality of the power amplification modules may be organized into an array to provide a power combiner. The power amplification modules in the array may be linked by isolation impedances that decouple the modules in the array.

Compact stabilized full-band power amplifier arrangement

An n-stage RF choke comprises a series connection of two or more inductors connected in series between a source and a load. The inductor closest to the source has the largest inductance and the inductance closest to the load has the smallest inductance. The inductances of any inductors between the inductor closest to the supply and the inductor closest to the load decrease as a function of distance from the supply. The junctions between the inductors in the series connection are shunted to ground by capacitors connected in series with resistors that provide a matched termination for increasing bandwidth by lowering circuit Q factors and eliminating resonant frequencies. The capacitor closest to the supply has the largest capacitance and the capacitor closest to the load has the smallest capacitance. Any intermediate capacitors decrease in capacitance as a function of distance from the supply. Such an arrangement provides a high impedance that isolates the load from the supply at a wide range of frequencies.

Wideband high frequency chokes

A segmented stub has at least one serpentine signal path that increases the effective electrical length of the stub without increasing the overall physical length or area of the stub. This permits more compact monolithic millimeter-wave and microwave integrated circuit design.

Compact segmented stub

A 1:N MEM switch module comprises N MEM switches fabricated on a common substrate, each of which has input and output contacts and a movable contact which bridges the input and output contacts when the switch is actuated. The input contacts are connected to a common input node, and the output contacts are connected to respective output lines. Each output line has an associated inductance and effective capacitance, and is arranged such that its inductance is matched to its effective capacitance. The switches are preferably arranged symmetrically about the terminus point of the signal input line. A phase shifter employs at least two switch modules connected together with N transmission lines having different lengths, operated such that an input signal is routed via one of the transmission lines to effect a desired phase-shift.

1:N MEM switch module

A hybrid circuit phase shifter assembly of RF MEMS switch modules and passive phase delay shifter circuits uses a low loss, preferably flip-chip, interconnection technology. The hybrid circuit assembly approach separates the fabrication of the MEMS switch modules from the fabrication of the passive phase delay circuits thereby avoiding process incompatibilities and low yields and providing substantial production cost savings. In another aspect of the invention, the integration on a common substrate of a MEMS-based hybrid circuit phase shifter assembly behind each of a plurality of radiating elements provides a compact, low cost electronic scanning antenna array.

Low loss RF phase shifter with flip-chip mounted MEMS interconnection

A multi layered high impedance structure presents a high impedance to multiple frequency signals, with a different frequency for each layer. Each layer comprises a dielectric substrate, and an array of radiating elements such as parallel conductive strips or conductive patches on the substrate's top surface, with a conductive layer on the bottom surface of the bottommost layer. The radiating elements of succeeding layers are vertically aligned with conductive vias extending through the substrates to connect the radiating elements to the ground plane. Each layer presents as a series of parallel resonant L-C circuits to an E field at a particular signal frequency, resulting in a high impedance surface at that frequency. The new structure can be used as the substrate for a microstrip patch antenna to provide an optimal electrical distance between the resonator and backplane at multiple frequencies. It can also be used in waveguides that transmit multiple signal frequencies signals in one polarization or that are cross-polarized. As a waveguide it maintains a near-uniform density E and H fields, resulting in near uniform signal power density across the waveguide's cross-section.

High impedance structures for multifrequency antennas and waveguides

A multi layered high impedance structure presents a high impedance to multiple frequency signals, with a different frequency for each layer. Each layer comprises a dielectric substrate, and an array of radiating elements such as parallel conductive strips or conductive patches on the substrate's top surface with a conductive layer on the bottom surface of the bottommost layer. The radiating elements of succeeding layers are vertically aligned with conductive vias extending through the substrates to connect the radiating elements to the ground plane. Each layer presents as a series of parallel resonant L-C circuits to an E field at a particular signal frequency, resulting in a high impedance surface at that frequency. The new structure can be used as the substrate for a microstrip patch antenna to provide an optimal electrical distance between the resonator and backplane at multiple frequencies. It can also be used in waveguides that transmit multiple signal frequencies signals in one polarization or that are cross-polarized. As a waveguide it maintains a near-uniform density E and H fields, resulting in near uniform signal power density across the waveguide's cross-section.

High impedence structures for multifrequency antennas and waveguides

An improved waveguide wall structure and improved waveguide using the new wall structure as the interior walls of the waveguide. The wall structure comprises a sheet of dielectric material, a series of parallel conductive strips on one side of the dielectric material and a layer of conductive material on the other side. Multiple conductive vias are also included through the dielectric material and between the conductive layer and conductive strips. The new wall structure presents as a series of parallel L-C circuits to a transverse E field at resonant frequency, resulting in a high impedance surface. The wall structure can be used in waveguides that transmit a signal in one polarization or signals that are cross polarized. The new waveguide maintains a near uniform density E field and H field component, resulting in near uniform signal power density across the waveguide cross section.

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Thousand Oaks, CA, United States of America

Jonathan Bruce Hacker