The State University of New York

University of Texas System

Intel Corporation

University of Nebraska

University of California

Jonathan Bird

Andrew Marshall

Dmitri E Nikonov

Peter A Dowben

Kang L Wang

Christian Binek

Victor Pogrebnyak

Uttam Singisetti

Huamin Li

Vasili Perebeinos

Xia Hong

The present disclosure describes electron-photon and electron-phonon interactions in 2D material systems. In some embodiments, novel entangled states are implemented. Such entangled states may involve the superposition of electronic and phononic modes in these materials. The states may be utilized to realize the transduction of quantum information and sensing. In an aspect, the present disclosure may be a quantum sensor having a single-phonon emitter configured to emit a single phonon. A phononic transducer is configured to receive the emitted single phonon from the single-phonon emitter and propagate the single phonon. A phonon detector is configured to detect an arrival of the propagated single phonon received from the phononic transducer.

Quantum devices and methods using entangled photons and phonons

A semiconductor device includes a source, a drain, and a channel electrically connected to the source and the drain. The channel has a channel length from the drain to the source which is less than or equal to an electron mean free path of the channel material. A first gate has two arms, each extending between the drain and the source (i.e., at least a portion of the distance between the source and the drain). Each arm of the first gate is disposed proximate to a corresponding first and second edge of the channel. Each arm of the first gate has a periodic profile along an inner boundary, wherein the periodic profiles of each arm are offset from each other such that a distance between the arms is constant. A Bloch voltage applied to the first gate will reduce the effective channel with such that Bloch resonance conditions are met.

Ballistic field-effect transistors based on Bloch resonance and methods of operating a transistor

Antiferromagnetic magneto-electric spin-orbit read (AFSOR) logic devices are presented. The devices include a voltage-controlled magnetoelectric (ME) layer that switches polarization in response to an electric field from the applied voltage and a narrow channel conductor of a spin-orbit coupling (SOC) material on the ME layer. One or more sources and one or more drains, each optionally formed of ferromagnetic material, are provided on the SOC material.

Magneto-electric logic devices using semiconductor channel with large spin-orbit coupling

A configurable ME MTJ XOR/XNOR gate includes an insulator separating a top and bottom FM layer, a top ME layer with a first boundary magnetism at an interface of the top ME layer and the top FM layer, a bottom ME layer with a second boundary magnetism at an interface of the bottom ME layer and the bottom FM layer, and a top electrode coupled to the top ME layer and a bottom electrode coupled to the bottom ME layer. A voltage between the top electrode and FM layer is a first input, a voltage between the bottom electrode and FM layer is a second input, and a resistance between the top and bottom FM layer is indicative of the XOR or the XNOR of the inputs. The configurable ME MTJ XOR/XNOR gate has reduced energy consumption, smaller area, faster switching times, is non-volatile, and is configurable.

Configurable exclusive-OR / exclusive-NOR gate using magneto-electric tunnel junctions

A magneto-electric (ME) magnetic tunnel junction (MTJ) Exclusive-OR (XOR) gate is provided. The ME MTJ XOR gate includes an insulator separating a top ferromagnetic (FM) layer and a bottom FM layer, a top ME layer on the top FM layer, and a bottom ME layer on the bottom FM layer. The ME MTJ XOR gate also includes a top electrode coupled to the top ME layer and a bottom electrode coupled to the bottom ME layer where a voltage between the top electrode and the top FM layer is a first input, a voltage between the bottom electrode and the bottom FM layer is a second input, and a resistance between the top FM layer and the bottom FM layer is indicative of the XOR of the first input and the second input. The ME MTJ XOR has reduced energy consumption, smaller area, faster switching times, and is non-volatile.

Exclusive-OR gate using magneto-electric tunnel junctions

A non-volatile memory circuit includes an SRAM cell with magnetoelectric or ferroelectric structures for maintaining data within the SRAM cell even with power off. In some implementations, the magnetoelectric and ferroelectric structures can be programmed using a NOR or tristate gate coupled to an internal state of the SRAM cell. In other implementations, the magnetoelectric and ferroelectric structures can be configured as programmable resistors in the cross-coupled signal path of the SRAM inverters.

Non-volatile latch using magneto-electric and ferro-electric tunnel junctions

Majority and minority logic can be implemented by voltage controlled switching of magneto-electric layers of magneto electric magnetic tunnel junction (ME-MTJ) devices. A ME-MTJ device includes an exchange bias-controlled switching element and a pinned ferromagnetic layer on an antiferromagnetic layer. In one case, the switching element includes a magneto electric (ME) layer on a free ferromagnetic (FM) layer, and is separated from the pinned FM layer by an insulator. To implement a majority or minority logic gate a single ME-MTJ device may be used where the device is provided with three electrodes contacting the ME layer in an overlaying relationship with the ME layer. The orientation of the pinned FM layer indicates whether the gate is a majority or a minority logic gate.

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Jonathan Bird