Cypress Semiconductor Corporation

Jonas Neo

Yoram Betser

Shivananda Shetty

James Minsu Pak

Amichai Givant

Pawan Kishore Singh

Amir Rochman

Stefano Amato

Cindy Sun

A non-volatile memory device and methods for operating the same are provided. The memory device may have multiple complementary memory cells. The method of blank check includes detecting a state value of each of the true and complementary transistors, generating an upper state value, Wherein a first predetermined amount of the true and complementary transistors have greater state values than the upper state value, generating a lower state value, wherein a second predetermined amount of the true and complementary transistors have less state values than the lower state value, generating a state value range based on a difference between the upper state value and the lower state value, and comparing the state value range to a threshold value to determine whether the plurality of complementary memory cells is in a blank state or a non-blank state. Other embodiments are also disclosed herein.

Non-volatile memory device and method of blank check

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San Jose, CA, United States of America

Jonas Neo