Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Albert-ludwigs-universitat Freiburg

Jonas Haunschild

Stefan Rein

Markus Glatthaar

A method is provided for measuring a semiconductor structure, which allows the spatially resolved determination of dark saturation current and/or series resistance and/or resistance of the emitter layer of the semiconductor structure via luminescence measurement, without restrictions being given such that one of the parameters must be known in advance or spatially consistent.

Method for measuring a semiconductor structure, which is a solar cell or a precursor of a solar cell

A method for spatially determining the series resistance of a semiconductor structure by generating luminescent radiation in the semiconductor structure under measurement conditions A and B, by determining a local calibration parameter Cfor a plurality of prescribed locations of the semiconductor structure and determining local series resistances Rfor a plurality of prescribed locations of the semiconductor structure. It is essential that the local series resistances Rare each determined as a function of a global series resistance Rof the semiconductor structure that is identical for all local series resistances.

Growing community of inventors

Freiburg, Germany

Jonas Haunschild