Corning Incorporated

Jonas Bankaitis

Michael John Moore

Venkata Adiseshaiah Bhagavatula

Daniel Warren Hawtof

Gary Edward Merz

Xinghua Li

Sergio Tsuda

Jeffery Scott Stone

John Stone, Iii

Chunhe Zhang

Uwe Stute

Christopher Paul Daigler

Kevin William Uhlig

Chad Michael Wilcox

Neil Eugene Partridge

Scott Steven Cronk

Christina Marie Laskowski

Duc Anh Bui

Paul Jeffrey Williamson

Gary Michael Huzinec

Processes and devices by which a brittle material substrate may be edge formed and finished to simultaneously remove corresponding damage remaining on the edges in the areas formed by cutting and separation while imposing a desired edge profile and achieving a desired mechanical edge strength. Processes of the present disclosure may include a chemical and mechanical brush polishing process configured to shape and/or polish a surface of one or more thin substrates. A plurality of substrates may be arranged in a stacked configuration, and engineered interposer devices may be arranged between the stacked substrates. The interposers may provide between the substrates and may direct filament placement during brushing so as to guide material removal on the substrate edges. Substrate edge profile shapes, including symmetric and asymmetric profiles, may be formed by strategic manipulation of interposer properties including dimensions, mechanical features, material properties, and positioning.

Method and apparatus for edge finishing of high mechanical strength thin glass substrates

Processes of chamfering and/or beveling an edge of a glass substrate of arbitrary shape using lasers are described herein. Two general methods to produce chamfers on glass substrates are the first method involves cutting the edge with the desired chamfer shape utilizing an ultra-short pulse laser that is followed by mechanical polishing with a compliant polishing wheel.

Edge chamfering by mechanically processing laser cut glass

A system and method for making a thin sintered silica sheet is provided. The method includes providing a soot deposition surface and forming a glass soot sheet by delivering a stream of glass soot particles from a soot generating device to the soot deposition surface. The method includes providing a sintering laser positioned to direct a laser beam onto the soot sheet and forming a sintered glass sheet from the glass soot sheet by delivering a laser beam from the sintering laser onto the glass soot sheet. The sintered glass sheet formed by the laser sintering system or method is thin, has low surfaces roughness and/or low contaminant levels.

Laser sintering system and method for forming high purity, low roughness silica glass

Methods and apparatus for processing edge portions of a donor semiconductor wafer include controlling chemical mechanical polishing parameters to achieve chamfering of the edges of the donor semiconductor wafer; and alternatively or additionally flexing the donor semiconductor wafer to present a concave configuration, where edge portions thereof are pronounced as compared to a central surface area thereof, such that the pronounced edge portions of the donor semiconductor wafer are preferentially polished against a polishing surface in order to achieve the chamfering.

Methods and apparatus for edge chamfering of semiconductor wafers using chemical mechanical polishing

Methods and apparatus for reducing damage of a semiconductor donor wafer include the steps of: (a) rotating a polishing pad, rotating the semiconductor donor wafer, applying a polishing slurry to the polishing pad, and pressing the semiconductor donor wafer and the polishing pad together; and (b) rotating the polishing pad and the semiconductor donor wafer, discontinuing the application of the polishing slurry, applying a rinsing fluid to the polishing pad, and pressing the semiconductor donor wafer and the polishing pad together, wherein step (a) followed by step (b) is carried out in sequence at least two times, and at least one of the following are reduced in at least two successive intervals of step (a): (i) a pressure at which the semiconductor donor wafer and the polishing pad are pressed together, (ii) a mean particle size of an abrasive within the polishing slurry, and (iii) a concentration of the slurry in water and stabilizers.

Semiconductor wafer re-use using chemical mechanical polishing

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Horseheads, NY, United States of America

Jonas Bankaitis