Siemens Aktiengesellschaft

Jon W Johansen

Klaus Bednorz

Fritz Scheidel

The present invention is directed to a semiconductor device comprising a body of semiconductor material having at least one p-n junction therein. The body of semiconductor material has opposed, flat, substantially parallel main faces and an edge portion extending between the two main faces. The p-n junction is exposed at the edge portion of the body. Metal electrodes are affixed to at least a portion of the two faces of the body of semiconductor material. A layer of protective material covers the edge portion, the metal electrodes, and any exposed portions of the two main faces of the body. Electrical contacts made to the body of semiconductor material by lead electrodes in compression bonded contact with the metal electrodes and in some cases with at least a portion of the main faces of the body of semiconductor material. The surface of the lead electrodes in contact with the metal electrodes and in some instances the main faces of the semiconductor body is comprised of a plurality of lands and grooves.

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Munich, Germany

Jon W Johansen