University of Utah Research Foundation

Jon Paul Johnson

Clayton Covey Williams

A single electron tunneling force spectroscopy (SETFS) system () can perform a series of surface potential charge measurements at an array of voltages (V) and tip-sample heights (Z). These measurements are combined with a tunneling model that includes the dependence of the tunneling probability on trap state depth and energy. Simultaneous measurement of the depth and energy of individual trap states in a sample, such as a dielectric film, with an atomic scale of spatial resolution can be achieved. When combined with two-dimensional trap state imaging, such techniques provide for three-dimensional imaging of electronic defect states with atomic scale spatial resolution.

Measurement of depth and energy of buried trap states in dielectric films by single electron tunneling force spectroscopy

Height control systems and/or methods are implemented for dynamic force tunneling microscopy and single electron tunneling force spectroscopy to improve their accuracy.

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Salt Lake City, UT, United States of America

Jon Paul Johnson