University of Iowa Research Foundation

Jon Olesberg

John P Prineas

Aaron Muhowski

Cassandra Bogh

In embodiments described herein, a light emitting diode device comprises an emission device with an emission region and a bottom contact layer. The emission region comprises n cascading emission layers, where n is a whole and positive number. The n cascading emission layers comprise at least one superlattice structure. In an embodiment, a tunnel junction is spaced between a first superlattice structure and a second superlattice structure. In an embodiment, light extraction is enhanced with a trapezoidal shaped chip, a roughened exit interface, and encapsulation of the chip with a hemispherical shaped polymer. In an embodiment, the superlattice structure may be repeated periods of InAs/AlGaInSb. In another embodiment, the superlattice may be repeated periods of InAs/GaInSb/InAs/AlAsSb. In another embodiment, between the bottom contact layer and the emission region is a tunnel junction where the bottom contact layer and the tunnel junction form an n-type anode layer.

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Iowa City, IA, United States of America

Jon Olesberg