The University of Birmingham

Irresistible Materials, Ltd

Chromatwist Limited

Other

Infineon Technologies Ag

Jon Andrew Preece

Alex Robinson

Richard Edward Palmer

Andreas Frommhold

Dongxu Yang

Alex Philip Graham Robinson

Alexandra McClelland

Günter Schmid

Werner Weber

Toshihiko Kanayama

Tetsuya Tada

Xiang Xue

R Johannes Luyken

Alexander Phillip Robinson

Markus Seitz

Drew Athans

Gregory O'Callaghan

Karolis Virzbickas

Drew Athens

Sareena Sund

Michael Butlin

Xiang Xu

Dennis Zhao

Owen Jones

Polycyclic aromatic hydrocarbons represented by the following general formula (I) wherein X is one of nitrogen, phosphorus, arsenic, antimony, bismuth, sulphur, selenium, tellurium; R independently represents an aromatic group and/or an aliphatic group; Q is one of a cyclic aliphatic hydrocarbon, a cyclic aromatic hydrocarbon, a polycyclic hydrocarbon, a polycyclic aromatic hydrocarbon, and/or a fused polycyclic aromatic hydrocarbon; wherein the substituents independently comprise one or more of a hydrogen atom, a deuterium atom, a fluorine atom, a chlorine atom, a bromine atom, a carbon atom, an oxygen atom (e.g. an alkylated oxygen atom), a nitrogen atom (e.g. an alkylated nitrogen atom), a cyano group, a nitro group, an alkyl group and/or anaryl group; p is an integer of 1 to 2; q is an integer of 1 to 4; Yand Yindependently represent one or more of a hydrogen atom, a deuterium atom, a fluorine atom, a chlorine atom, a bromine atom, a carbon atom, an oxygen atom (e.g. an alkylated oxygen atom), a nitrogen atom (e.g. an alkylated nitrogen 20 atom), a cyano group, a nitro group, an alkyl group and/oranaryl group; and x is an integer of 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 or more.

Luminescent compounds

Polycyclic aromatic hydrocarbon derivatives represented by the following general formula: (I) wherein R independently represents an aromatic group and/or an aliphatic group; Q is one of a cyclic aliphatic hydrocarbon, a cyclic aromatic hydrocarbon, a polycyclic hydrocarbon, a polycyclic aromatic hydrocarbon, and/or a fused polycyclic aromatic hydrocarbon; wherein the substituents independently comprise one or more of a hydrogen atom, a deuterium atom, a fluorine atom, a chlorine atom, a bromine atom, a carbon atom, an oxygen atom (e.g. an alkylated oxygen atom), a nitrogen atom (e.g. an alkylated nitrogen atom), a cyano group, a nitro group, an alkyl group and/or an aryl group; p is an integer of 1 to 2; q is an integer of 1 to 4; Yand Yindependently represent one or more of a hydrogen atom, a deuterium atom, a fluorine atom, a chlorine atom, a bromine atom, a carbon atom, an oxygen atom (e.g. an alkylated oxygen atom), a nitrogen atom (e.g. an alkylated nitrogen atom), a cyano group, a nitro group, an alkyl group and/or an aryl group; and x is an integer of 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 or more.

The present disclosure relates to novel methanofullerene derivatives, negative-type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays. Negative photosensitive compositions are also disclosed.

Methanofullerenes

The present disclosure relates to novel methanofullerene derivatives, negative-type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.

Methanofullerene derivatives having side chains with acid-labile protecting groups. The methanofullerene derivatives may find application as photoresist materials, and particularly as positive-tone photoresists.

Photoresist composition

The use as a resist material of a methanofullerene derivative having a plurality of open-ended addends, and to a method for forming a patterned resist layer on a substrate using the methanofullerene derivatives. The methanofullerene derivatives can be represented by the formal C(CRR)where x is at least 10, m is at least 2, each addend represented by CRRis the same or different, and wherein each Rand Ris each a monovalent organic group, or a divalent organic group which forms a ring structure by being joined to the fullerene shell, or where both Rand Rof an addend are divalent groups, they may be mutually joined to form a ring structure, save that at least two of Ror two of Rare monovalent, or a mixture of such derivatives. The use of any methanofullerene derivative which has been chemically amplified for formation of a patterned resist layer. The essential step of the method is forming a coating layer comprising the methanofullerene derivative on the substrate surface, the methanofullerene derivative being chemically amplified by including in the coating layer at least one additional component which increases the sensitivity of the exposed layer to actinic radiation which is subsequently used to pattern the layer.

Use of methanofullerne derivatives as resist materials and method for forming a resist layer

A method for the formation of a patterned resist layer on a substrate surface by patternwise irradiation with actinic radiation. The first step of the method is formation of a coating layer comprising a substituted triphenylene compound having a diameter of between 1 and 3 nm, a sensitizer which increases the sensitivity of the exposed layer to the actinic radiation used in a subsequent irradiation step and a cross-linker on the substrate surface. Subsequently the coating layer is irradiated patternwise, and unirradiated areas of the coating layer are removed. A resist material comprising a solution of: (i) as the principal resist material a triphenylene derivative having a diameter of from 1 to 3 rim, (ii) a sensitizer which increases the sensitivity of the resist material to actinic radiation, and (iii) a cross-linker capable of cross-linking molecules of the triphenyl derivative, the cross-linker optionally being constituted by a moiety attached to the triphenylene derivative.

Resist material and method for forming a patterned resist layer on a substrate

The circuit element has a first layer composed of an electrically insulating substrate material and a first electrically conductive material which is in the form of at least one discrete area such that it is embedded in the substrate material and/or is applied to the substrate material. Furthermore, it has a second layer having a second electrically conductive material, and a monomolecular layer composed of redox-active bispyridinium molecules, which is arranged between the first layer and the second layer. The bispyridinium molecules are immobilized on the electrically conductive material which is in the form of at least one discrete area, and make electrical contact with the second electrical material of the second layer. Furthermore, electrically inert molecules are immobilized on the first layer, which molecules form a matrix which surrounds the at least one discrete area with the monomolecular layer composed of bispyridinium molecules.

Circuit element having a first layer composed of an electrically insulating substrate material, a method for producing a circuit element, bispyridinium compounds and their use in circuit elements

A high resolution patterning method of a resist layer is disclosed by patternwise irradiation of a resist layer with electron beam utilizing a polysubstituted triphenylene compound as the electron beam resist material, which is graphitized and made insoluble in both polar and non-polar organic solvents for electron doses greater than 2&times;10 C/cm , and which undergoes cleavage of the adduct chains and extensive de-aromatization of the triphenylene core therefore enhancing the solubility in polar solvents only for electron doses between 3&times;10 and 2&times;10 C/cm . The thus formed positive or negative tone resist layer is highly resistant against dry etching to ensure the utility of the method in fine patterning work for the manufacture of semiconductor devices.

Electron beam resist

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Birmingham, United Kingdom

Jon Andrew Preece