Renesas Technology Corp.

Hitachi, Ltd.

Joji Okada

Toshihiko Tanaka

Norio Hasegawa

Kazutaka Mori

Ko Miyazaki

In order to shorten the period for the development and manufacture of a semiconductor integrated circuit device, at the time of transferring integrated circuit patterns onto a wafer by an exposure process, a photomask PMis used which is provided partially with light shielding patternsformed of a resist film, in addition to light shielding patterns formed of a metal.

Method of manufacturing integrated circuit

In order to shorten the period for the development and manufacture of a semiconductor integrated circuit device, at the time of transferring integrated circuit patterns onto a wafer by an exposure process, a photomask PMis used which is provided partially with a light shielding patternsformed of a resist film, in addition to light shielding patterns formed of a metal.

In order to shorten the time required to change or correct a mask pattern over a mask, light-shielding patterns formed of a resist film for integrated circuit pattern transfer are partly provided over a mask substrate constituting a photomask in addition to light-shielding patterns formed of a metal for the integrated circuit pattern transfer.

Manufacturing method of photomask and photomask

In order to shorten the period for the development and manufacture of a semiconductor integrated circuit device, at the time of transferring integrated circuit patterns onto a wafer by an exposure process, a photomask PM is used which is provided partially with light shielding patterns formed of a resist film, in addition to light shielding patterns formed of a metal.

Growing community of inventors

Tokorozawa, Japan

Joji Okada