Fujitsu Corporation

Fujitsu Semiconductor Limited

Socionext Inc.

Joji Fujimori

Seiki Sakuyama

Ichiro Yamaguchi

Takumi Ihara

Seiji Ueno

Kunio Kodama

Yasunori Fujimoto

Masanori Onodera

Masataka Mizukoshi

Hirohisa Matsuki

Eiji Watanabe

Toshiya Akamatsu

Masashi Takenaka

Kenichi Nagashige

Masayuki Ochiai

Yutaka Makino

Toshiyuki Motooka

Shigeki Harada

Tatsuharu Matsuda

Hiroyuki Yoda

Kenichi Kado

Minoru Nakada

Tatsuro Yamashita

Syuichirou Takahasi

A semiconductor device includes: a substrate; a semiconductor element installed on the substrate so that a surface formed with an electrode is directed to the substrate; a chip capacitor installed on the substrate; and a conductive material covering a rear surface opposite to the surface of the semiconductor element and joining to one terminal electrode of the chip capacitor.

Manufacturing method of semiconductor device

Semiconductor device and manufacturing method of semiconductor device

A mounting method of a semiconductor element whereby the semiconductor element is mounted on a wiring board via an outside connection projection electrode not containing lead (Pb), the mounting method includes a step of applying a reflow heating process for connecting the outside connection projection electrode of the semiconductor element and the wiring board and then cooling the connected semiconductor element and wiring board at a cooling rate equal to and lower than 0.5&#xb0; C./s.

Mounting method of semiconductor element using outside connection projection electyrode and manufacturing method of semiconductor device using outside connection projection electrode

To provide a low-cost, easy-to-use, and efficient method for manufacturing a semiconductor device, which eliminates the need for the formation or removal of barrier metals upon formation of bumps, and a high-performance semiconductor device with fine bumps arranged at a narrow pitch. The method includes: forming a plurality of electrode padson one surface of a semiconductor substrate; forming insulating layers (e.g., inorganic insulating layerand organic insulating layer) to cover the perimeter of each electrode pad; selectively forming a mask layeron the insulating layersand; cleaning the surface of the electrode padswhich is not covered with the insulating layersand; forming external terminalsin regions defined by the insulating layersandand mask layerso that they are in contact with the electrode pads; and removing the mask layer

Semiconductor device and manufacturing method for the same

A method of forming a solder ball includes the steps of forming an electrode pad on a substrate, forming an insulating layer having a first opening at a position of the electrode pad, filling the first opening with solder paste that include solder and first resin, and applying a heating process to the solder paste so as to form a solder ball on the electrode pad and to form a cured resin member of the first resin across a border between the electrode pad and the substrate.

Formation of solder balls having resin member as reinforcement

A method of making a semiconductor device includes a resin film forming step for forming a resin film on a semiconductor substrate provided with electrode portions to cover the electrode portions an opening forming step for forming openings in the resin film at locations corresponding to the electrode portions a loading step for loading a bump material in the openings, a bump forming step for forming bumps in the openings by heating, and a removing step for removing the resin film.

Method of making semiconductor device

A semiconductor substrate is prepared which has a principal surface, an exposed pad made of conductive material being formed in a partial area of the principal surface, and the other area of the principal surface being covered with a first insulating film. A base conductive film is formed on the first insulating film and the pad. A photoresist film having a thickness of 50 &mgr;m or thicker is formed on the base conductive film. An opening is formed through the photoresist film in an area corresponding to the pad to expose a partial surface area of the base conductive film. A conductive bump electrode is deposited on the base conductive film exposed on a bottom of the opening. The photoresist film is removed. This method is suitable for making a fine pitch between bump electrodes.

Semiconductor device with flip chip bonding pads and manufacture thereof

A test board used for testing a semiconductor device provided with projection electrodes includes a main board and testing electrodes. The testing electrodes are provided on the main board, each projecting upwardly from the main board. When the semiconductor device is tested, the testing electrodes are electrically connected to the projection electrodes by insertion of the testing electrodes into the projection electrodes. The semiconductor device is mounted on the main board to test the semiconductor device through the testing electrodes.

Test board for testing a semiconductor device, method of testing the

Growing community of inventors

Kawasaki, Japan

Joji Fujimori