Kabushiki Kaisha Toshiba

Johta Fukuhara

Akihiro Kajita

Hirokazu Ezawa

Hitoshi Itoh

Masahiro Miyata

Kenichi Otsuka

Hidemitsu Egawa

Katsuhiko Oya

Shinzi Takeda

This invention provides a method of manufacturing a semiconductor device, including the steps of forming an insulating film and a first metal film on one major surface of a semiconductor substrate, each of the insulating film and the first metal film having a partially exposed surface, and selectively forming a second metal film on the exposed surface of the first metal film, wherein formation of the second metal film is performed in an atmosphere containing a gasified silicon compound obtained upon gasifying a liquid silicon compound containing at least one element selected from the group consisting of carbon, hydrogen, oxygen, chlorine, and fluorine, or its reaction product, whereby the exposed surface of the insulating film is chemically modified with the silicon compound or its reaction product.

Method of manufacturing a semiconductor device

An evaporation chamber for forming fine metal particles is separated from a film formation chamber in which the substrate having a metal film such as a metal column thereon is placed during metal film deposition. The pressure of the film formation chamber is set to be lower than that of the evaporation chamber, and the fine metal particles are sprayed on the substrate by the pressure difference to form the metal column. Therefore, a wiring layer, a connection electrode for connecting the wiring layer to another wiring layer, and the like can easily be formed by a small number of steps.

Apparatus and method of manufacturing semiconductor device

Growing community of inventors

Tokyo, Japan

Johta Fukuhara