Samsung Electronics Co., Ltd.

Johnsoo Kim

Dohyoung Kim

Doo-Young Lee

Heungsik Park

Sanghyun Lee

Keunhee Bai

Hongsik Shin

Younghun Choi

A sacrificial layer is formed to cover the gate structures. The sacrificial layer is patterned to form a first opening in the sacrificial layer. A preliminary contact is formed in the first opening and the sacrificial layer is selectively removed. An insulating layer is formed to cover the gate structures and to expose the preliminary contact. The preliminary contact is removed to form a second opening in the insulating layer, and then a contact is formed in the second opening.

Methods of forming semiconductor device

A method of forming a semiconductor device includes forming a gate electrode on a substrate, forming a first spacer on a sidewall of the gate electrode, forming a second spacer on the first spacer, and forming a capping pattern on top surfaces of the gate electrode, the first spacer and the second spacer. An outer sidewall of the second spacer is vertically aligned with a sidewall of the capping pattern.

Methods of manufacturing semiconductor devices including gate patterns with sidewall spacers and capping patterns on the sidewall spacers

Growing community of inventors

Hwaseong-si, South Korea

Johnsoo Kim