Motorola Corporation

Johnson O Olowolafe

Hisao Kawasaki

Robert W Fiordalice

Stanley Michael Filipiak

Chii-Chang Lee

The present invention includes a process for forming an intermetallic layer and a device formed by the process. The process includes a reaction step where a metal-containing layer reacts with a metal-containing gas, wherein the metals of the layer and gas are different. In one embodiment of the present invention, titanium aluminide may be formed on the sides of an interconnect. The process may be performed in a variety of equipment, such as a furnace, a rapid thermal processor, a plasma etcher, and a sputter deposition machine. The reaction to form the intermetallic layer is typically performed while the substrate is at a temperature no more than 700 degrees Celsius.

Semiconductor device having a titanium-aluminum compound

An aluminum-nickel-chromium (Al-Ni-Cr) layer used as an interconnect within a semiconductor device is disclosed. The Al-Ni-Cr layer has about 0.1-0.5 weight percent nickel and about 0.02-0.1 weight percent chromium. Usually, the nickel or chromium concentrations are no greater than 0.5 weight percent. The layer is resistant to electromigration and corrosion. The low nickel and chromium concentrations allow the layer to be deposited and patterned similar to most aluminum-based layers.

Al-Ni-Cr conductive layer for semiconductor devices

A conformal titanium nitride film having a preferred &lt;111&gt; crystal orientation is formed by chemically vapor depositing the film in two separate steps. In the first deposition step a titanium nitride layer (22) having poor step coverage and a preferred &lt;111&gt; crystal orientation is formed. In the second deposition step a second conformal layer of titanium nitride (24) is insitu deposited onto the first titanium nitride layer (22), wherein during the deposition the first titanium nitride layer (22) acts as a crystallographic seed layer for the second titanium nitride layer (24). As a result, a titanium nitride layer exhibiting a preferred &lt;111&gt; crystal orientation and good step coverage is achieved.

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Austin, TX, United States of America

Johnson O Olowolafe