Tower Semiconductor Ltd.

Johnatan A Kantarovsky

Sharon Levin

Sagy Levy

David Mistele

Some demonstrative embodiments include a Metal-Oxide-Semiconductor (MOS) transistor including a multi-split gate. For example, an Integrated Circuit (IC) may include at least one MOS transistor, the MOS transistor may include a source; a drain; a body; and a multi-split gate including a control gate component configured to control conductivity of the MOS transistor, and at least first and second field plate gate components, the first field plate gate component is electrically isolated from the second field plate gate component, the first and second field plate gate components are electrically isolated from the control gate.

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Zicron Yaakov, Israel

Johnatan A Kantarovsky