Skorpios Technologies, Inc.

Solaero Technologies Corp.

Other

John Y Spann

Stephen B Krasulick

Amit Mizrahi

Timothy Creazzo

Elton Marchena

John M Dallesasse

Daniel James Aiken

Mark A Stan

Arthur Cornfeld

Paul R Sharps

Benjamin Cho

Pravin Patel

Damien Lambert

John Zyskind

Derek Van Orden

Robert J Stone

A composite device for splitting photonic functionality across two or more materials comprises a platform, a chip, and a bond securing the chip to the platform. The platform comprises a base layer and a device layer. The device layer comprises silicon and has an opening exposing a portion of the base layer. The chip, a material, comprises an active region (e.g., gain medium for a laser). The chip is bonded to the portion of the base layer exposed by the opening, such that the active region of the chip is aligned with the device layer of the platform.

Integration of an unprocessed, direct-bandgap chip into a silicon photonic device

A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.

Diffusion blocking layer for a compound semiconductor structure

A composite device for splitting photonic functionality across two or more materials comprises a platform, a chip, and a bond securing the chip to the platform. The platform comprises a base layer and a device layer. The device layer comprises silicon and has an opening exposing a portion of the base layer. The chip, a material, comprises an active region (e.g., gain medium for a laser). The chip is bonded to the portion of the base layer exposed by the opening such that the active region of the chip is aligned with the device layer of the platform. A coating hermetically seals the chip in the platform.

A multijunction solar cell includes an upper first solar subcell having a first band gap, a second solar subcell having a second band gap smaller than the first band gap, and a first graded interlayer composed of (InxGa1-x)yAl1-yAs adjacent to the second solar subcell. The first graded interlayer has a third band gap greater than the second band gap subject to the constraints of having the in-plane lattice parameter greater or equal to that of the second subcell and less than or equal to that of the third subcell, wherein 0&#x3c;x&#x3c;1 and 0&#x3c;y&#x3c;1, and x and y are selected such that the band gap of the first graded interlayer remains constant throughout its thickness at 1.5 eV. A third solar subcell is adjacent to the first graded interlayer and has a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell. A second graded interlayer composed of (InxGa1-x)yAl1-yAs is adjacent to the third solar subcell and has a fifth band gap greater than the fourth band gap subject to the constraints of having the in-plane lattice parameter greater or equal to that of the third subcell and less than or equal to that of the bottom fourth subcell, wherein 0&#x3c;x&#x3c;1 and 0&#x3c;y&#x3c;1, and x and y are selected such that the band gap of the second graded interlayer remains constant throughout its thickness at 1.1 eV. A lower fourth solar subcell is adjacent to the second graded interlayer and has a sixth band gap smaller than the fourth band gap.

Inverted metamorphic multijunction solar cells including metamorphic layers

A multijunction solar cell includes an upper first solar subcell, a second solar subcell adjacent to the first solar subcell, a third solar subcell adjacent to the second solar subcell, and a graded interlayer adjacent to the third solar subcell. The graded interlayer has a band gap that is greater than the band gap of the third solar subcell and is composed of a compositionally step-graded series of (InGa)AlAs layers with monotonically changing lattice constant, with x and y having respective values such that the band gap of the graded interlayer remains constant throughout its thickness, and wherein 0&#x3c;x&#x3c;1 and 0&#x3c;y&#x3c;1. A fourth solar subcell is adjacent to the graded interlayer and is lattice mismatched with respect to the third solar subcell. The graded interlayer provides a transition in lattice constant from the third solar subcell to the fourth solar subcell. A lower fifth solar subcell is adjacent to the fourth solar subcell.

Inverted metamorphic multijunction solar cell including a metamorphic layer

A device for a gain medium for a semiconductor laser has an active region, a buffer layer, a substrate, and an etch stop between the buffer layer and the substrate. The device is bonded to a silicon platform having silicon devices, such as a waveguide and mirror. The substrate is removed, after bonding the device to the platform. The buffer layer is made of different material than the substrate to reduce undercut of the buffer layer during substrate removal compared to a buffer layer made of the same material as the substrate.

Semiconductor layer variation for substrate removal after bonding

A transfer substrate with a compliant resin is used to bond one or more chips to a target wafer. An implant region is formed in a transfer substrate. A portion of the transfer substrate is etched to form a riser. Compliant material is applied to the transfer substrate. A chip is secured to the compliant material, wherein the chip is secured to the compliant material above the riser. The chip is bonded to a target wafer while the chip is secured to the compliant material. The transfer substrate and compliant material are removed from the chip. The transfer substrate is opaque to UV light.

Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal

A method for fabricating a photonic composite device for splitting functionality across materials comprises providing a composite device having a platform and a chip bonded in the platform. The chip is processed comprising patterning, etching, deposition, and/or other processing steps while the chip is bonded to the platform. The chip is used as a gain medium and the platform is at least partially made of silicon.

Processing of a direct-bandgap chip after bonding to a silicon photonic device

A composite photonic device comprises a platform, a chip, and a contact layer. The platform comprises silicon. The chip is made of a III-V material. The contact layer has indentations to help control a flow of solder during bonding of the platform with the chip. In some embodiments, pedestals are placed under an optical path to prevent solder from flowing between the chip and the platform at the optical path.

Structures for bonding a direct-bandgap chip to a silicon photonic device

An optical modulator includes an input port, a first waveguide region comprising silicon and optically coupled to the input port, and a waveguide splitter optically coupled to the first waveguide region and having a first output and a second output. The optical modulator also includes a first phase adjustment section optically coupled to the first output and comprising a first III-V diode and a second phase adjustment section optically coupled to the second output and comprising a second III-V diode. The optical modulator further includes a waveguide coupler optically coupled to the first phase adjustment section and the second phase adjustment section, a second waveguide region comprising silicon and optically coupled to the waveguide coupler, and an output port optically coupled to the second waveguide region.

Hybrid optical modulator

A method for fabricating a composite device comprises providing a platform, providing a chip, and bonding the chip to the platform. The platform has a base layer and a device layer above the base layer. An opening in the device layer exposes a portion of the base layer. The chip is bonded to the portion of the base layer exposed by the opening in the device layer. A portion of the chip extends above the platform and is removed.

Coplanar integration of a direct-bandgap chip into a silicon photonic device

A multijunction solar cell having at least four solar subcells includes a first solar subcell having a first band gap. A first graded interlayer adjacent to the first solar subcell and has a second band gap greater than the first band gap and that is constant at 1.5 eV throughout the thickness of the first graded interlayer. A second solar subcell is adjacent to the first graded interlayer and has a third band gap smaller than the first band gap of the first solar subcell. The second solar subcell is lattice mismatched with respect to the first solar subcell. A second graded interlayer is adjacent to the second solar subcell and has a fourth band gap greater than the third band gap of the second solar subcell and that is constant at 1.1 eV throughout the thickness of the second graded interlayer. A third solar subcell is adjacent to the second graded interlayer and has a fifth band gap smaller than the third band gap of the second solar subcell. The third solar subcell is lattice mismatched with respect to the second solar subcell. Each of the first and second graded interlayers is composed, respectively, of a compositionally step-graded series of (InGa)AlAs layers with monotonically changing lattice constant, with x and y having respective values such that the band gap of each interlayer remains constant throughout its thickness, and wherein 0&#x3c;x&#x3c;1 and 0&#x3c;y&#x3c;1.

Inverted metamorphic multijunction solar cell with metamorphic layers

A method of fabricating a composite semiconductor structure is provided. Pedestals are formed in a recess of a first substrate. A second substrate is then placed within the recess in contact with the pedestals. The pedestals have a predetermined height so that a device layer within the second substrate aligns with a waveguide of the first substrate, where the waveguide extends from an inner wall of the recess.

Method and system for height registration during chip bonding

A composite device for splitting photonic functionality across two or more materials comprises a platform, a chip, and a bond securing the chip to the platform. The platform comprises a base layer and a device layer. The device layer comprises silicon and has an opening exposing a portion of the base layer. The chip, a III-V material, comprises an active region (e.g., gain medium for a laser). The chip is bonded to the portion of the base layer exposed by the opening such that the active region of the chip is aligned with the device layer of the platform. A coating hermitically seals the chip in the platform.

Growing community of inventors

Albuquerque, NM, United States of America

John Y Spann