Applied Materials, Inc.

John William Lane

Mariusch Gregor

Balarabe Mohammed

Chris Melcer

Mark A Crockett

Aneesh Khullar

Erica Porras

Micahel DeChellis

Dan Joseph Healy

Michael Robert Rice

James P Cruse

Berrin Daran

Bhaswan Manjunath

Andrew Nguyen

Ivo Johannes Raaijmakers

Nir Merry

Robert S Busacca

Ming Xu

Dmitry A Dzilno

Ezra Robert Gold

Corie Lynn Cobb

Marcel E Josephson

Alex Minkovich

Justin Hough

Hong P Gao

Vincent Kirchhoff

Emir Vukotic

Prashanth Vasudeva

Ramachandra Murthy Gunturi

Duc Dang Buckius

Keith Brian Porthouse

Hongbin Li

Michael J DeChellis

Ralph H M Straube

Methods and apparatus for in-situ calibration of a flow controller are provided herein. In some embodiments, a method of flowing a gas includes providing a flow controller configured to provide a first gas at a first value of a flow rate based on a calculated first relationship determined by using a standard gas; determining an actual first relationship between the flow rate and the setpoint for the first gas from a plurality of values of the flow rate of the first gas determined at a corresponding plurality of values of the setpoint of the flow controller, wherein each of the plurality of values of the flow rate is determined from flowing the first gas through the flow controller at corresponding ones of the plurality of values for the setpoint; and flowing the first gas at the first value of the flow rate based on the actual first relationship.

Methods for monitoring a flow controller coupled to a process chamber

Methods for in-situ calibration of a flow controller

Apparatus and system for mixing gas comprising a first valve coupled to a first conduit controlling flow of a first gas, a second valve coupled to a second conduit controlling flow of a second gas, a controller controlling the valves, a base block with a first gas input coupled to the first conduit, a second gas input coupled to the second conduit and an output opening, a mixing chamber formed within the base block, wherein the mixing chamber is coupled to the first gas input and the second gas input to receive input gases, an inner block disposed within the mixing chamber, the inner block including a body with an inner volume and one or more perimeter holes formed through the body coupling the mixing chamber to the inner volume of the inner block; and a gas outlet configured to flow gas through the output opening of the base block.

Compact device for enhancing the mixing of gaseous species

Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.

N-channel flow ratio controller calibration

The present invention provides methods and apparatus for controlling gas flow to a semiconductor-processing chamber. The invention includes deactivating ratio setpoint feedback control in a flow ratio controller; initiating gas flow through the flow ratio controller; moving valves of the flow ratio controller to a preset position based on a stored position when an upstream pressure reaches a stored upstream pressure value, wherein the stored position and the stored upstream pressure value were stored during a prior process run; determining that steady state flow ratio controller output flows have been reached; and activating ratio setpoint feedback control in the flow ratio controller. Numerous additional features are disclosed.

Methods and apparatus for enhanced gas flow rate control

Methods and apparatus for delivery of gas are provided herein. In some embodiments, a gas delivery system may include a premix tank having an inlet and an outlet; a plurality of gas supplies coupled to the inlet of the premix tank; a plurality of valves, each valve respectively disposed in line with a corresponding one of the plurality of gas supplies; and a conduit coupling the outlet of the premix tank to one or more gas delivery zones.

Gas delivery system and method of use thereof

Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.

Methods and apparatus for processing substrates using model-based control

Methods and apparatus for calibrating a plurality of gas flows in a substrate processing system are provided herein. In some embodiments, a substrate processing system may include a cluster tool comprising a first process chamber and a second process chamber coupled to a central vacuum transfer chamber; a first flow controller to provide a process gas to the first process chamber; a second flow controller to provide the process gas to the second process chamber; a mass flow verifier to verify a flow rate from each of the first and second flow controllers; a first conduit to selectively couple the first flow controller to the mass flow verifier; and a second conduit to selectively couple the second flow controller to the mass flow verifier.

Methods and apparatus for calibrating flow controllers in substrate processing systems

A method and apparatus that solve the problem of accurate measurement of gas flow so that the delivery of gases in semiconductor processing may be performed with greater confidence and accuracy by performing real-time characterization of a lead-line for mass flow controller (MFC) flow verification are provided. In one embodiment a mass flow verifier (MFV) provides rate of rise information to a controller via a digital interface without correcting for lead-line influences. After receiving the rate of rise data, the tool host computer computes a gas mass correction factor in real-time based on at least one of the following: MFC temperature sensor data, lead-line temperature sensor data, lead-line pressure transducer data, and lead-line volume. The rate of rise data and gas mass correction factor are used to compute accurate mass flow. The accurate mass flow information may be used to calibrate the MFC.

Real time lead-line characterization for MFC flow verification

A space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The invention also includes an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and may be partially integrated or fully integrated into a processing chamber which also includes diffusion bonded layers.

Method of attaching components to fluid delivery systems using diffusion bonding

A method and apparatus are provided for a cost effective pressure dampening device used in a fluid delivery system for substrate processing. In one embodiment, the pressure dampening device is disposed between a mounting substrate and a control valve within a fluid control assembly in fluid communication with a substrate processing chamber. The pressure dampening device is capable of dampening small pressure perturbations in a process fluid which is used for substrate processing.

Method and apparatus for dampening pressure fluctuations in a fluid delivery system

A space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The invention also includes an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and the various fluid handling and monitoring components may be partially integrated or fully integrated into the substrate, depending on design and material requirements.

Method of increasing etchability of metals having chemical etching resistant microstructure

A space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The fluid delivery system includes an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and the various fluid handling and monitoring components may be partially integrated or fully integrated into the substrate, depending on design and material requirements.

Manufacture of an integrated fluid delivery system for semiconductor processing apparatus

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San Jose, CA, United States of America

John William Lane