Micron Technology Incorporated

John Whitman

Jeff C Johnson

John T Davlin

A method for spinning a material onto a semiconductor device structure so as to substantially fill recesses formed in a surface of the semiconductor device structure and to impart the material with a substantially planar surface and semiconductor device structures formed thereby. The thickness of the material covering the surface is less than the depth of the recesses. The surface may remain substantially uncovered by the material.

Spin coating for maximum fill characteristic yielding a planarized thin film surface

A method and apparatus for applying conservative amounts of a fluid to coat a silicon wafer surface. The surface is rotated and the fluid is applied to the surface through multiple application ports. Centrifugal forces spread the fluid across the wafer surface.

Multi-port chemical dispense

A method and apparatus is provided for more efficient application of photoresist to a wafer surface. One aspect of the method comprises applying solvent to the wafer and spinning it to coat the entire wafer surface prior to the application of photoresist. This reduces surface tension on the wafer and reduces the amount of resist required to achieve a high quality film. The apparatus comprises adding a third solenoid and nozzle to the coating unit to accommodate the application of solvent to the center of the wafer surface. The method also describes incorporating a new solvent comprising diacetone alcohol, which is a low-pressure solvent, providing extended process latitudes and reduced material expenditures.

Solvent prewet and method to dispense the solvent prewet

Solvent prewet and method and apparatus to dispense the solvent prewet

Method for applying a fluid to a rotating silicon wafer surface

A method and apparatus is provided for more efficiently application of photoresist to a wafer surface. One aspect of the method comprises applying solvent to the wafer and spinning it to coat the entire wafer surface prior to the application of photoresist. This reduces surface tension on the wafer and reduces the amount of resist required to achieve a high quality film. The apparatus comprises adding a third solenoid and nozzle to the coating to accommodate the application of solvent tot he center of the wafer surface. The method also describes incorporating a new solvent comprising DI-Acetone Alcohol, which is a low-pressure solvent, providing extended process latitudes and reduced material expenditures.

The present invention provides for the controlled rate of removal of common electron beam-curable materials, such as photoresists, from substrates, including silicon wafers in various stages of fabrication, by typical CMP processes and also provides a method of planing or otherwise altering the surface topography of a these substrates. The present invention utilizes typical CMP processes and common electron beam-curable materials to protect the underlying substrate surface from scratching and polishing away during the CMP processing. In addition, because of the ability in the present invention to precisely tailor the etch rates of the electron beam-curable material with that of the underlying substrate, substrates may be formed which have areas of electron beam-curable material which is either convex or concave to the plane of the substrate surface.

Growing community of inventors

Boise, ID, United States of America

John Whitman