Group4 Labs, Inc.

Element Six Technologies Limited

John Wasserbauer

Daniel Francis

Dubravko Ivan Babic

Felix Ejeckam

Firooz Faili

Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layer

Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates

Semiconductor devices having gallium nitride epilayers on diamond substrates

Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.

Composite wafers having bulk-quality semiconductor layers and method of manufacturing thereof

Growing community of inventors

San Leandro, CA, United States of America

John Wasserbauer