Rca Inc.

General Electric Company

John W Robinson

Grzegorz Kaganowicz

Ronald E Enstrom

Alfred C Ipri

John Henry Thomas, Iii

Hirotsugu Yasuda

The adherence of the alignment layer of a liquid crystal cell is improved by simultaneously glow discharging and sputtering the alignment materials onto the conductors and substrates of the liquid crystal cell.

Method of making liquid crystal devices with improved adherence

A process of forming a three region dielectric film on silicon and a semiconductor device employing such a film are disclosed. Silicon is oxidized in an oxygen-containing ambient. The oxidation step forms a first region of silicon oxide. Once oxidation has begun, reactive sputtering of aluminum in an oxygen plasma is initiated. This forms a second region of said dielectric film which comprises a mixture of silicon and aluminum oxides. A third region comprising substantially aluminum oxide is formed by the continuing reactive sputtering step. A semiconductor device comprising said three region dielectric film interposed between an electrode and a semiconductor body has little or no shift in threshold voltage providing good stability and can be fabricated in substantially less time and/or at lower temperatures than prior art methods.

Method of forming silicon and aluminum containing dielectric film and

A semiconductor body with an improved passivating layer is disclosed. In one embodiment, the body is a device comprising a semiconductor material having regions of opposite conductivity types which form a semiconductor junction therebetween which extends to a surface of the device. The passivating layer, comprising silicon oxynitride having a refractive index between about 1.55 and 1.75 and a substantial hydrogen content, overlies the surface at the junction. Also disclosed is a method for fabricating such a device wherein the vapor deposition of the passivating layer is carried out at low temperatures from an ambient having a ratio of silicon-containing to oxygen- and nitrogen-containing precursors of between about 1:1.67 and 1:5.

Silicon oxynitride passivated semiconductor body and method of making

A method of making a semiconductor device including forming regions of first and second conductivity types with a semiconductor junction therebetween which extends to a surface of the device, and depositing a passivating layer over the surface to overlie the junction, further comprises a pretreatment of the surface to enhance the electrical properties of the device and the effectiveness of the passivating layer. The pretreatment, carried out prior to deposition of the passivating layer, includes treating the surface with an aqueous ammonium fluoride-hydrogen fluoride solution and thereafter subjecting the surface to a plasma in an oxygen-free, nitrogen-containing ambient.

Preparation of a surface for deposition of a passinating layer

A low temperature, high power method of plasma oxidation for silicon dioxide films is disclosed. The method includes the use of magnetron electrodes which effectively increase the power density of the plasma. The effective power density should be between 1 and 15 Watts/cm.sup.2 and preferably about 6 Watts/cm.sup.2. By maintaining the substrate temperature below about 300.degree. C., and preferably at about 130.degree. C., it has been found that a high quality silicon dioxide film up to about 1000.ANG. in thickness is grown. The films produced by this process have an excellent interface with the silicon, good electrical properties and good density.

Low temperature growth of silicon dioxide on silicon

It has been found that by subjecting a source of silicon and an oxygen containing gaseous precursor to a glow discharge in the presence of an excess of hydrogen, a silicon dioxide film of substantially increased density can be deposited onto a substrate. Alternatively, where it is important to have an enhanced silicon to silicon dioxide interface, the process may comprise a first step of growing a silicon dioxide film between 50 and 1000.ANG. thick by low temperature plasma oxidation and a second step of depositing by glow discharge an additional thickness of silicon dioxide layer, which is produced from a plasma of a source of silicon and an oxygen-containing gaseous precursor, in an excess of hydrogen.

Low temperature method of deposition silicon dioxide

An improved apparatus for preparing a coating by subjecting gaseous reactant precursors to a glow discharge is disclosed. The improvement comprises an electrode which is larger in all dimensions than the substrate which is to be coated. Electrically insulated magnets are arranged such that the area of the magnets is proportionally distributed with respect to the area of the substrate to be coated, whereby enhanced uniformity of quality and thickness of the deposited coating are provided. Unexpectedly the coating deposition rate increases substantially without increasing the power required or precursor consumption, and further, the temperature does not markedly increase during deposition.

Glow discharge apparatus for use in coating a disc-shaped substrate

An improved method of preparing a coating by subjecting gaseous precursors to a glow discharge and an apparatus suitable for carrying out such a method are disclosed. The improvement includes mounting a substrate onto a plate of ferromagnetic material which enhances the deposition rate of the coating within the electrode area.

Apparatus and method for preparing an abrasive coated substrate

A method for forming a perfluorinated polymeric film having improved adhesion to a substrate surface whereby the substrate surface is initially glow discharged in the presence of nitrogen, and then a polymeric film is deposited on the substrate surface by subjecting the surface to a glow discharge in the presence of a precursor comprising a compound selected from the group consisting of perfluorocycloalkanes, perfluorocycloolefins and perfluoroalkyl-substituted derivatives thereof.

Adherent perfluorinated layers

A method for preparing a plastic lapping disc overcoated with an abrasive silicon oxide layer. The method comprises the steps of introducing the silicon oxide precursors into an evacuated chamber containing the plastic lapping disc wherein a first major surface of the plastic disc is substantially covered during the glow deposition. The precursors are then subjected to a glow discharge. An abrasive silicon oxide layer is deposited on a second major surface of the disc opposite the first major surface.

Method for preparing an abrasive lapping disc

An improved method for preparing an abrasive SiO.sub.x coating wherein 1.ltoreq.x.ltoreq.2. The method includes the steps of submitting SiH.sub.4 and N.sub.2 O to glow discharge and depositing the SiO.sub.x product of the glow discharge onto a substrate. The improvement includes the additional step of adjusting the refractive index and thickness of the SiO.sub.x coating by means of the glow discharge deposition process parameters so as to maximize the abrasiveness of the SiO.sub.x coating.

Method of preparing an abrasive coated substrate

A method of preparing an abrasive silicon oxide coating on a substrate which includes glow discharging silane and N.sub.2 O in the presence of a substrate whereby a first silicon oxide layer having a refractive index of between about 1.0 and 1.2 as measured by ellipsometry is deposited. A second silicon oxide layer having a refractive index of between about 1.30 and 1.48 as measured by ellipsometry is glow discharge deposited onto the first layer.

Method for obtaining an abrasive coating

A method for preparing an abrasive SiO.sub.x coating, wherein 1.ltoreq..times..ltoreq.2, on a substrate by glow discharge deposition wherein the deposition on the substrate in a vacuum chamber is interrupted before the desired final SiO.sub.x coating thickness is obtained. SiH.sub.4 and N.sub.2 O are subjected to a glow discharge and SiO.sub.x is deposited onto the substrate. The deposition is interrupted, SiH.sub.4 is removed from the vacuum chamber and the SiO.sub.x coating is exposed to oxygen. These steps are repeated until the desired final SiO.sub.x coating thickness is obtained.

Method of coating substrates with an abrasive layer

This invention relates to a video disc with a thin polymeric dielectric layer formed from acetylene and nitrogen in a glow discharge. The dielectric layer has improved age deterioration resistance and wear characteristics and can be prepared with low power levels.

Video disc with a dielectric layer formed from acetylene and nitrogen

This invention relates to a video disc with a thin polymeric dielectric layer formed from styrene and nitrogen. The dielectric layer has improved age deterioration resistance, wear characteristics and adhesion to a metal conductive layer.

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Levittown, PA, United States of America

John W Robinson