Hewlett Packard Enterprise Development LP

Other

Compaq Computer Corporation, Inc.

Intersil Americas Inc.

The Fountainhead Group, Inc.

Intersil Corporation

Liken Home Furnishings

Quantumcyte, Inc.

John W Butler

Robert Teisberg

Guodong Zhang

Paul Vu

Anthony L Rivoli

Donald Frank Hemmenway

Jose Avelino Delgado

Ying Y Butler

Brian Humpherys

Michael D Church

George V Rouse

Michael L Witkowski

George S Bajor

Lawrence Pearce

Mike Witkowski

Theodore F Emerson

Siamak Tavallaei

Doron Chosnek

Sudhindra Belur Gopalarao

Donald E Wall

L George Valle

Walter Williams

Bidhan Chaudhuri

Provided herein are structures and methods for isolating cellular components from at least one region of interest in a planar tissue section. Structures and methods as described can allow for isolation and tagging of tissue regions.

Methods, compositions, and devices for isolation and expression analysis of regions of interest from a tissue

A flexible fade resistant posted marker sign based on a flexible substrate and fade resistant coating that can bend to lock onto a studded flanged post by positioning the sign ends between the studs on the post with the body arching across and over middle studs on the post with the sign being wide enough to span across the flanges of the post and be secured with wire passing through holes positioned to place the wire at the sides of the width of the post to inhibit vertical, horizontal, and twisting movement of the sign while still maintaining a continuous center section of the sign for use as a colored warning blaze.

Fade resistant posted marker sign

One embodiment describes a network system. The system includes a primary enclosure including a network switch system that includes a plurality of physical interface ports. A first one of the plurality of physical interface ports is to communicatively couple to a network. The system further includes a sub-enclosure comprising a network interface card (NIC) to which a computer system is communicatively coupled and a downlink extension module (DEM) that is communicatively coupled with the NIC and a second one of the plurality of physical interface ports of the network switch system to provide network connectivity of the computer system to the network via the network switch system.

Switch network architecture

In one example in accordance with the present disclosure, a system for auto-negotiation over extended backplane includes an enclosure and a switch external to the enclosure. The enclosure has a NIC (network interface controller) for a server in the enclosure and a DEM (downlink extension module). The DEM has a single DEM PHY connected to the NIC via a backplane and also connected to the switch via an external connection. The DEM PHY facilitates auto-negotiation between the switch and the NIC.

Auto-negotiation over extended backplane

Backpack water spray tank

A compact portable leg exercise apparatus includes a top platform, a base member, a resilient member and a frame assembly interposed between the top platform and base member. The apparatus is sized to receive a foot onto the top platform to move the top platform relative to the base member and against a force provided by the resilient member as the apparatus is moved to the collapsed position. The apparatus is sized to fit in carryon luggage, handbag, backpack or be hand-carried, allowing for its use anywhere. The frame assembly aligns the top platform and base member and inhibits twisting motion of the top platform relative to the base member, thereby constraining the motion of travel for the apparatus. The frame assembly can include a plurality of hinged leaf pairs shaped to inhibit generation of noise by the frame assembly as it moves to the collapsed configuration during use of the exercise apparatus. The exercise apparatus is light weight, small, quiet and stable, allowing for it use at home, the office, in public, in the airplane, or even within a vehicle.

Compact portable leg exercise machine

Handle and clamp assembly for sprayer tank

Beach beverage holder

A low temperature coefficient resistor(TCRL) has some unrepaired ion implant damage. The damaged portion raises the resistance and renders the resistor less sensitive to operating temperature fluctuations. A polysilicon thin film low temperature coefficient resistor and a method for the resistor's fabrication overcomes the coefficient of resistance problem of the prior art, while at the same time eliminating steps from the BiCMOS fabrication process, optimizing bipolar design tradeoffs, and improving passive device isolation. A low temperature coefficient of resistance resistor (TCRL) is formed on a layer of insulation, typically silicon dioxide or silicon nitride, the layer comprising polysilicon having a relatively high concentration of dopants of one or more species. An annealing process is used for the implanted resistor which is shorter than that for typical prior art implanted resistors, leaving some intentional unannealed damage in the resistor. The planned damage gives the TCRL a higher resistance without increasing its temperature coefficient. A process for fabrication of the resistor is used which combines separate spacer oxide depositions, provides buried layers having different diffusion coefficients, incorporates dual dielectric trench sidewalls that double as a polish stop, supplies a spacer structure that controls precisely the emitter-base dimension, and integrates bipolar and CMOS devices with negligible compromise to the features of either type.

BICMOS process with low temperature coefficient resistor (TCRL)

A low temperature coefficient resistor (TCRL) has some unrepaired ion implant damage. The damaged portion raises the resistance and renders the resistor less sensitive to operating temperature fluctuations A polysilicon thin film low temperature coefficient resistor and a method for the resistor's fabrication overcomes the coefficient of resistance problem of the prior art, while at the same time eliminating steps from the BiCMOS fabrication process, optimizing bipolar design tradeoffs, and improving passive device isolation. A low temperature coefficient of resistance resistor (TCRL) is formed on a layer of insulation, typically silicon dioxide or silicon nitride, the layer comprising polysilicon having a relatively high concentration of dopants of one or more species. An annealing process is used for the implanted resistor which is shorter than that for typical prior art implanted resistors, leaving some intentional unannealed damage in the resistor. The planned damage gives the TCRL a higher resistance without increasing its temperature coefficient. A process for fabrication of the resistor is used which combines separate spacer oxide depositions, provides buried layers having different diffusion coefficients, incorporates dual dielectric trench sidewalls that double as a polish stop, supplies a spacer structure that controls precisely the emitter-base dimension, and integrates bipolar and CMOS devices with negligible compromise to the features of either type.

BiCMOS process with low temperature coefficient resistor (TCRL)

A low temperature coefficient resistor (TCRL) has some unrepaired ion implant damage. The damaged portion raises the resistance and renders the resistor less sensitive to operating temperature fluctuations.

Low temperature coefficient resistor (TCRL)

Growing community of inventors

Pasadena, CA, United States of America

John W Butler