Round Rock Research, LLC

Micron Technology Incorporated

John Vernon

F Daniel Gealy

Noel Rocklein

Cancheepuram V Srividya

David A Korn

Jeff Nelson

The invention includes a dielectric mode from ALD-type methods in which two or more different precursors are utilized with one or more reactants to form the dielectric material. In particular aspects, the precursors are aluminum and hafnium and/or zirconium for materials made from a hafnium precursor, the hafnium oxide is predominantly in a tetragonal crystalline phase.

Constructions comprising hafnium oxide and/or zirconium oxide

The invention includes ALD-type methods in which two or more different precursors are utilized with one or more reactants to form a material. In particular aspects, the precursors are hafnium and aluminum, the only reactant is ozone, and the material is hafnium oxide predominantly in a tetragonal crystalline phase.

In some embodiments, the invention may include utilization of at least one iteration of an ALD pulse sequence that has the pulse subsets M-M-R- and M-(R-M-): where x is at least 2; where Mis a first metal-containing precursor comprising a first metal, Mis a second metal-containing precursor comprising a second metal different from the first metal, and R is a reactant which reacts with one or both of the first and second metals. The ALD pulse sequence forms material over a substrate, and such material includes the first and second metals. The hyphen between pulses means that the second pulse directly follows the first pulse, with the term 'directly follows' indicating that the second pulse either immediately follows the first pulse or that only a purge separates the first and second pulses.

Growing community of inventors

Boise, ID, United States of America

John Vernon