International Business Machines Corporation

Globalfoundries Inc.

Front Edge Technology, Inc.

John Ulrich Knickerbocker

Bing Dang

Paul Stephen Andry

Li-Wen Hung

Qianwen Chen

Jeffrey Donald Gelorme

Cornelia K Tsang

Jae-Woong Nah

Govindarajan Natarajan

Bucknell Chapman Webb

David Clifford Long

Jon Alfred Casey

Minhua Lu

Peter Alfred Gruber

Mukta G Farooq

Russell Alan Budd

Steven Lorenz Wright

Evan G Colgan

James N Humenik

Steven Alan Cordes

James L Speidell

Shaji Farooq

Raschid Jose Bezama

Robert L Wisnieff

Raymond R Horton

John Michael Cotte

Katsuyuki Sakuma

Krishna Gandhi Sachdev

Sudipta Kumar Ray

Edmund Juris Sprogis

Mark J LaPlante

Subhash Laxman Shinde

Lester W Herron

Roy Rongqing Yu

Charles Hampton Perry

Mario John Interrante

Emily R Kinser

Edward Emile Kelley

Leland Chang

Philip George Emma

Lawrence Jacobowitz

Thomas Weiss

Stephen L Buchwalter

Claudius Feger

Andrew Ramsay Knox

Kang-Wook Lee

Sarah Huffsmith Knickerbocker

Norman J Dauerer

Kenneth Parker Rodbell

Robert David Allen

Duixian Liu

Thomas J Brunschwiler

Wayne John Howell

S Jay Chey

Effendi Leobandung

Casimer M DeCusatis

Claude Louis Bertin

William R Tonti

Voya Rista Markovich

Michael S Gordon

Michael A Gaynes

Christopher Vincent Jahnes

Sri Muthuthamby Sri-Jayantha

Gareth Geoffrey Hougham

Mark Vincent Pierson

Lubomyr Taras Romankiw

Da-Yuan Shih

John Anthony Fitzsimmons

Wayne Frederick Ellis

Sufi Zafar

Hillery C Hunter

Roger Allan Quon

Sung Kwon Kang

Brian Paul Gaucher

Michael P Belyansky

Gerard McVicker

Steven Paul Ostrander

Thomas R Miller

Douglas James Joseph

Vincenzo Condorelli

Kai Liu

Hariklia Deligianni

Daniel Joseph Friedman

Arvind Kumar

Robert K Montoye

Martin L Schmatz

Harm Peter Hofstee

Griselda Bonilla

Joshua M Rubin

Kamal Kumar Sikka

Benjamin V Fasano

Jean-Olivier Plouchart

Eric D Perfecto

Michael Jay Shapiro

John S Beeteson

Leathen Shi

Frank Louis Pompeo

How Tzu Lin

Akihiro Horibe

Takashi Hisada

A stack structure that includes: a device wafer, a handler wafer, and a bonding structure disposed between the device wafer and the handler wafer, wherein one or both of the device wafer and the handler wafer have a release layer that is configured to be substantially or completely vaporized by infrared ablation when exposed to an infrared laser energy. The device wafer includes at least two consecutive layers adjacent the bonding structure that together include a plurality of fill portions that substantially or completely disable entry of the infrared laser energy into a plurality of layers of the device wafer below the two consecutive layers adjacent the bonding structure.

Infrared debond damage mitigation by copper fill pattern

A base substrate, high-k substrate layers on the base substrate with discrete decoupling capacitors embedded, high density substrate layers on the high-k substrate layers supporting wiring and wiring spacing of less than 2 up to about 10 micron width, pitch connectivity between the upper surface of the base substrate and a lower surface of the set of high density substrate layers supports less than 50 up to about 300 micron pitch, the pitch connectivity on an upper surface of the set of high density substrate layers supports less than about 150 micron pitch. A method including attaching a set of metal posts at each contact on a lower surface of a set of high density substrate layers, attaching to a handler, attaching an interconnect layer to a base substrate, and attaching the set of high density substrate layers to the base substrate while aligning each metal post with a contact.

Electronic substrate stacking

An interconnect for a semiconductor device includes a laminate substrate; a first plurality of electrical devices in or on a surface of the laminate substrate; a redistribution layer having a surface disposed on the surface of the laminate substrate; a second plurality of electrical devices in or on the surface of the redistribution layer; and a plurality of transmission lines between the first plurality of electrical devices and the second plurality of electrical devices. The surface of the laminate substrate and the surface of the redistribution layer are parallel to each other to form a dielectric structure and a conductor structure.

High density interconnection and wiring layers, package structures, and integration methods

A mechanism is provided in a data processing system to implement a multi-sensor health monitoring platform. The mechanism applies a machine learning model to predict patient needs and patient activity trends based on physiological features and activity features of the patient. The mechanism applies the machine learning model to predict energy requirements for a plurality of medical sensors based on the predicted patient needs and patient activity trends. The mechanism schedules recharging of the plurality of medical sensors based on the predicted energy requirements and identifying one or more sensors to set to an activate state based on the predicted patient needs and patient activity trends. The mechanism collecting sensor data from the one or more sensors and applies the machine learning model to generate a point-of-care recommendation based on the collected sensor data.

Multi-sensor platform for health monitoring

A semiconductor die package that has a substrate with one or more substrate layers with one or more substrate connections. A substrate layer can include one or more redistribution layers (RDLs). One or more dies (e.g., multiple dies) are disposed on a top substrate layer. The dies have one or more die external connections. Some of the die external connections are electrically connected to one or more substrate connections. One or more metallic dam stiffeners form into a dam enclosure that is disposed on and physically connected to the top substrate layer. The dam enclosure encloses one or more of the dies. The metallic dam enclosure has one or more electrically connected regions where the metallic dam enclosure is electrically connected to one or more of the substrate horizontal connections and one or more electrically insulated regions where the metallic dam enclosure is electrically insulated from one or more of the substrate horizontal connections and the substrate via connections. In different embodiments, the dam enclosure stiffens the substrates/package during manufacture, assembly, and operation; provides confinement for underfill application; and provides a heat conduction path for heat removal. Methods of manufacturing and assembling the die package are disclosed.

Multiple die assembly

Handler wafers and methods of handling a wafer include positioning a handler, which is attached to a wafer by a bonding layer that comprises a debonding layer, an optical enhancement layer, and an anti-reflection layer. The handler is debonded from the wafer using a laser that emits laser energy at a wavelength that is absorbed by the debonding layer and that is confined to the debonding layer by the optical enhancement layer, such that the material of the debonding layer ablates when exposed to the laser energy to release the wafer.

Silicon handler with laser-release layers

Systems, computer-implemented methods and/or computer program products that facilitate wearable multiplatform sensing are provided. In one embodiment, a computer-implemented method comprises: measuring, by a system operatively coupled to a processor, wirelessly on a nail plate, physiological data of an entity; integrating and synchronizing, by the system, the physiological data with other physiological data from one or more devices to form integrated physiological data; and analyzing, by the system, the integrated physiological data to detect one or more disorders.

Wearable multiplatform sensor

Thin Film Batteries are made of battery layers. Each battery layer has a substrate with one or more battery structures on the substrate surface. The battery structures have a first electrode connection and a second electrode, a first electrode (e.g. a cathode or anode) is electrically connected to the first electrode connection and a second electrode (e.g. an anode or cathode) is electrically connected to the second electrode connection. An electrolyte is at least partial disposed between and electrically connected to the first and second electrodes. A first edge connection on one of the substrate edges is physically and electrically connected to the first electrode connection. A second edge connection on one of the substrate edges is physically and electrically connected to the second electrode connection. An electrically insulating lamination is disposed on the substrate and covers the components except for the first and second edge connections, connected to respective battery electrodes. A first stack external connection electrical connects two or more of the first edge connections and a second stack external connection electrical connects two or more of the second edge connections. A first and second battery pole are connected to the respective first and second stack external connections. The TFBs are hermetically sealed.

Thin film battery stacking

An interposer sandwich structure includes a top interposer and a bottom interposer enclosing an integrated circuit electronic device that includes an attachment for attaching the device to the bottom interposer, and an interconnection structure connecting the top interposer to the bottom interposer. The top interposer may also be directly connected to a chip carrier in addition to the bottom interposer. The structure provides shielding and protection of the device against Electrostatic Discharge (ESD), Electromagnetic Interference (EMI), and Electromagnetic Conductivity (EMC) in miniaturized 3D packaging.

Silicon interposer sandwich structure for ESD, EMC, and EMC shielding and protection

An improved molten solder injection head having a vacuum filter and differential gauge system is provided. In one aspect, an injection head is provided. The injection head includes: a reservoir; an injection port on a bottom of the injection head connected to the reservoir; a vacuum port adjacent to the injection port on the bottom of the injection head connected to a vacuum source; and a filter disposed between the bottom of the injection head and the vacuum source. A method for molten solder injection using the present injection head is provided.

Molten solder injection head with vacuum filter and differential gauge system

One or more die stacks are disposed on a redistribution layer (RDL) to make an electronic package. The die stacks include a die and one or more Through Silicon Via (TSV) dies. Other components and/or layers, e.g. interposes layers, can be included in the structure. An epoxy layer disposed on the RDL top surface and surrounds and attached to all the TSV die sides and all the die sides. Testing circuitry is located in various locations in some embodiments. Locations including in the handler, die, TSV dies, interposes, etc. Testing methods are disclosed, Methods of making including 'die first' and 'die last' methods are also disclosed. Methods of making heterogenous integrated structure and the resulting structures are also disclosed, particularly for large scale, e.g. wafer and panel size, applications.

Precision thin electronics handling integration

Die stacks and methods of making die stacks with very thin dies are disclosed. The die surfaces remain flat within a 5 micron tolerance despite the thinness of the die and the process steps of making the die stack. A residual flux height is kept below 50% of the spacing distance between adjacent surfaces or structures, e.g. in the inter-die spacing.

Method of forming thin die stack assemblies

A bonding material including a phenoxy resin thermoplastic component, and a carbon black filler component. The carbon black filler component is present in an amount greater than 1 wt. %. The carbon black filler converts the phenoxy resin thermoplastic component from a material that transmits infra-red (IR) wavelengths to a material that absorbs a substantial portion of infra-red (IR) wavelengths.

Thermoplastic temporary adhesive for silicon handler with infra-red laser wafer de-bonding

A method for integrating a thin film microbattery with electronic circuitry includes forming a release layer over a handler, forming a thin film microbattery over the release layer of the handler, removing the thin film microbattery from the handler, depositing the thin film microbattery on an interposer, forming electronic circuitry on the interposer, and sealing the thin film microbattery and the electronic circuitry to create individual microbattery modules.

Miniaturized electronics package with patterned thin film solid state battery

Growing community of inventors

Monroe, NY, United States of America

John Ulrich Knickerbocker