Asml Netherlands B.v.

John Tom Stewart, Iv

Andrew David LaForge

Yezheng Tao

Igor Vladimirovich Fomenkov

Alexander Igorevich Ershov

Daniel Brown

Jordan Jur

Chunguang Xia

Alexander Anthony Schafgans

Yue Ma

Jason Michael Arcand

Christianus W J Berendsen

Robert Jay Rafac

Nina Vladimirovna Dziomkina

Dzmitry Labetski

Jonghoon Baek

Christianus Wilhelmus Johannes Berendsen

David Robert Evans

Henricus Gerardus Tegenbosch

Klaus Martin Hummler

Michael Anthony Purvis

Marc Guy Langlois

Kornelis Frits Feenstra

Kerim Nadir

Maksim Loginov

Seyedmohammad Mojab

Alexander Shatalov

Arun Johnkadaksham

Matthias Kraushaar

Deniz Van Heijnsbergen

Rui Miguel Duarte Rodriges Nunes

Daniel Jw Brown

In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

Cleaning a structure surface in an EUV chamber

An extreme ultraviolet radiation (EUV) source, including: a vessel having an inner vessel wall and an intermediate focus (IF) region; an EUV collector disposed inside the vessel, the EUV collector including a reflective surface configured to reflect EUV radiation toward the intermediate focus region, the reflective surface configured to directionally face the IF region of the vessel; a showerhead disposed along at least a portion of the inner vessel wall, the showerhead including a plurality of nozzles configured to introduce gas into the vessel; and one or more exhausts configured to remove gas introduced into the vessel, the one or more exhausts being oriented along at least a portion of the inner vessel wall so that the gas is caused to flow away from the EUV collector.

Guiding device and associated system

Disclosed is an EUV system in which a source control loop is established to maintain and optimize debris flux while not unduly affecting optimum EUV generation conditions. One or more temperature sensors, e.g., thermocouples may be installed in the vessel to measure respective local gas temperatures. The respective local temperature as measured by the one or more thermocouples can be used as one or more inputs to the source control loop. The source control loop may then adjust the laser targeting to permit optimization of debris generation and deposition while not affecting EUV production, thus extending the lifetime of the source and its collector.

Method of controlling debris in an EUV light source

A first target is provided to an interior of a vacuum chamber, a first light beam is directed toward the first target to form a first plasma from target material of the first target, the first plasma being associated with a directional flux of particles and radiation emitted from the first target along a first emission direction, the first emission direction being determined by a position of the first target; a second target is provided to the interior of the vacuum chamber; and a second light beam is directed toward the second target to form a second plasma from target material of the second target, the second plasma being associated with a directional flux of particles and radiation emitted from the second target along a second emission direction, the second emission direction being determined by a position of the second target, the first and second emission directions being different.

Reducing the effect of plasma on an object in an extreme ultraviolet light source

Apparatus for and method of controlling debris in an EUV light source

An initial pulse of radiation is generated; a section of the initial pulse of radiation is extracted to form a modified pulse of radiation, the modified pulse of radiation including a first portion and a second portion, the first portion being temporally connected to the second portion, and the first portion having a maximum energy that is less than a maximum energy of the second portion; the first portion of the modified pulse of radiation is interacted with a target material to form a modified target; and the second portion of the modified pulse of radiation is interacted with the modified target to generate plasma that emits extreme ultraviolet (EUV) light.

Extreme ultraviolet light source

Extreme ultraviolet light source utilizing a target of finite extent

A first remaining plasma that at least partially coincides with a target region is formed; a target including target material in a first spatial distribution to the target region is provided, the target material including material that emits EUV light when converted to plasma; the first remaining plasma and the initial target interact, the interaction rearranging the target material from the first spatial distribution to a shaped target distribution to form a shaped target in the target region, the shaped target including the target material arranged in the shaped spatial distribution; an amplified light beam is directed toward the target region to convert at least some of the target material in the shaped target to a plasma that emits EUV light; and a second remaining plasma is formed in the target region.

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San Diego, CA, United States of America

John Tom Stewart, Iv